متابعة
Saptarshi Das
Saptarshi Das
Ackley Professor of Engineering, Pennsylvania State University
بريد إلكتروني تم التحقق منه على psu.edu
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
High Performance Multi-layer MoS2 Transistors with Scandium Contacts‏
S Das, HY Chen, AV Penumatcha, J Appenzeller‏
Nano Letters 13 (1), 100-105, 2013‏
28082013
Recent advances in two-dimensional materials beyond graphene‏
GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ...‏
ACS Nano 9 (12), 11509-11539, 2015‏
27642015
Tunable transport gap in phosphorene‏
S Das, W Zhang, M Demarteau, A Hoffmann, M Dubey, A Roelofs‏
Nano letters 14 (10), 5733-5739, 2014‏
8162014
Contact engineering for 2D materials and devices‏
DS Schulman, AJ Arnold, S Das‏
Chemical Society Reviews 47 (9), 3037-3058, 2018‏
8092018
Beyond graphene: progress in novel two-dimensional materials and van der Waals solids‏
S Das, JA Robinson, M Dubey, H Terrones, M Terrones‏
Annual Review of Materials Research 45 (1), 1-27, 2015‏
7432015
Transistors based on two-dimensional materials for future integrated circuits‏
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...‏
Nature Electronics 4 (11), 786-799, 2021‏
6752021
WSe2 field effect transistors with enhanced ambipolar characteristics‏
S Das, J Appenzeller‏
Applied physics letters 103 (10), 2013‏
4962013
All two-dimensional, flexible, transparent, and thinnest thin film transistor‏
S Das, R Gulotty, AV Sumant, A Roelofs‏
Nano letters 14 (5), 2861-2866, 2014‏
4712014
Ambipolar Phosphorene Field Effect Transistor‏
S Das, M Demarteau, A Roelofs‏
ACS Nano 8 (11), 11730-11738, 2014‏
4622014
Benchmarking monolayer MoS2 and WS2 field-effect transistors‏
A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das‏
Nature Communications 12 (1), 693, 2021‏
4392021
Where Does the Current Flow in Two-Dimensional Layered Systems?‏
S Das, J Appenzeller‏
Nano Letters 13 (7), 3396–3402, 2013‏
3152013
A roadmap for electronic grade 2D materials‏
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...‏
2D Materials 6 (2), 022001, 2019‏
2962019
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors‏
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das‏
ACS Nano 11 (3), 3110-3118, 2017‏
2832017
Towards Low Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides‏
S Das, A Prakash, R Salazar, J Appenzeller‏
ACS Nano 8 (2), 1681-89, 2014‏
2232014
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire‏
M Chubarov, TH Choudhury, DR Hickey, S Bachu, T Zhang, A Sebastian, ...‏
ACS Nano, 2021‏
2192021
A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector‏
D Jayachandran, A Oberoi, A Sebastian, TH Choudhury, B Shankar, ...‏
Nature Electronics 3 (10), 646-655, 2020‏
1972020
Screening and interlayer coupling in multilayer MoS2‏
S Das, J Appenzeller‏
physica status solidi (RRL)-Rapid Research Letters 7 (4), 268-273, 2013‏
1972013
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport‏
F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ...‏
Science Advances 5 (5), eaav5003, 2019‏
1842019
Origin of the turn-on temperature behavior in WTe 2‏
YL Wang, LR Thoutam, ZL Xiao, J Hu, S Das, ZQ Mao, J Wei, R Divan, ...‏
Physical Review B 92 (18), 180402, 2015‏
1792015
Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor‏
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...‏
Advanced Science 7 (24), 2001174, 2020‏
1602020
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20