مقالات بحثية تمّ التفويض بإتاحتها للجميع - Carlos Navarroمزيد من المعلومات
عدد المقالات البحثية غير المتاحة للجميع في أي موقع: 24
Experimental demonstration of capacitorless A2RAM cells on silicon-on-insulator
N Rodriguez, C Navarro, F Gamiz, F Andrieu, O Faynot, S Cristoloveanu
IEEE Electron Device Letters 33 (12), 1717-1719, 2012
التفويضات: Government of Spain
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ...
Nature Electronics 2 (9), 412-419, 2019
التفويضات: European Commission
Low-power Z2-FET capacitorless 1T-DRAM
MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
التفويضات: European Commission
Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell
S Navarro, C Navarro, C Marquez, N Salazar, P Galy, S Cristoloveanu, ...
IEEE Electron Device Letters 40 (7), 1084-1087, 2019
التفويضات: European Commission, Government of Spain
Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
A Ohata, N Rodriguez, C Navarro, L Donetti, F Gamiz, ...
Journal of Applied Physics 113 (14), 2013
التفويضات: Government of Spain
Back-gate effects and mobility characterization in junctionless transistor
MS Parihar, F Liu, C Navarro, S Barraud, M Bawedin, I Ionica, A Kranti, ...
Solid-State Electronics 125, 154-160, 2016
التفويضات: Department of Science & Technology, India, European Commission
Towards InGaAs MSDRAM capacitor-less cells
C Navarro, S Navarro, C Marquez, C Sampedro, L Donetti, S Karg, H Riel, ...
ECS Transactions 85 (8), 195, 2018
التفويضات: European Commission
Evaluation of thin-oxide Z2-FET DRAM cell
S Navarro, KH Lee, C Marquez, C Navarro, M Parihar, H Park, P Galy, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
التفويضات: European Commission
Back-gate effects and detailed characterization of junctionless transistor
MS Parihar, FY Liu, C Navarro, S Barraud, M Bawedin, I Ionica, A Kranti, ...
Solid State Device Research Conference (ESSDERC), 2015 45th European, 282-285, 2015
التفويضات: Department of Science & Technology, India, European Commission
Memory operations of zero impact ionization, zero subthreshold swing FET matrix without selectors
S Kwon, C Navarro, P Galy, S Cristoloveanu, F Gamiz, J Ahn, YT Kim
IEEE Electron Device Letters 41 (3), 361-364, 2020
التفويضات: European Commission
Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap
C Sampedro, C Medina-Bailon, L Donetti, JL Padilla, C Navarro, ...
International Conference on Large-Scale Scientific Computing, 438-445, 2019
التفويضات: European Commission, Government of Spain
Analysis of the heterogate electron–hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy …
JL Padilla, C Medina-Bailon, C Navarro, C Alper, F Gamiz, AM Ionescu
IEEE Transactions on Electron Devices 65 (1), 339-346, 2017
التفويضات: European Commission, Government of Spain
Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
S Navarro, C Marquez, KH Lee, C Navarro, M Parihar, H Park, P Galy, ...
Solid-State Electronics 159, 12-18, 2019
التفويضات: European Commission
Tri-dimensional A2-RAM cell: Entering the third dimension
F Gámiz, N Rodriguez, C Navarro, C Marquez, S Cristoloveanu
Functional Nanomaterials and Devices for Electronics, Sensors and Energy …, 2014
التفويضات: Government of Spain
Characteristics of band modulation FET on sub 10 nm SOI
S Kwon, C Navarro, F Gamiz, S Cristoloveanu, P Galy, M Choi, YT Kim, ...
Japanese Journal of Applied Physics 58 (SB), SBBB07, 2019
التفويضات: European Commission
CVD-grown back-gated MoS2 transistors
C Marquez, N Salazar, F Gity, C Navarro, G Mirabelli, R Duffy, J Galdon, ...
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
التفويضات: Science Foundation Ireland, European Commission
Simulation study on Z2FET scalability, process optimization and their impact on performance
M Duan, F Adamu-Lema, C Navarro, F Gamiz, A Asenov
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
التفويضات: European Commission
Z2-FET memory matrix in 28 nm FDSOI technology
MS Parihar, KH Lee, HJ Park, C Navarro, J Lacord, F Gamiz, P Galy, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
التفويضات: European Commission
Low-Frequency Noise in InGaAs-OI Transistors
C Marquez, C Navarro, S Karg, R Ortega, C Zota, F Gamiz
IEEE Transactions on Electron Devices, 2024
التفويضات: European Commission
Low-Frequency Noise in InGaAs-OI 1T-DRAMs
C Marquez, C Navarro, S Karg, R Ortega, C Zota, F Gamiz
2023 International Conference on Noise and Fluctuations (ICNF), 1-4, 2023
التفويضات: European Commission
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