مقالات بحثية تمّ التفويض بإتاحتها للجميع - Min Hyuk Parkمزيد من المعلومات
عدد المقالات البحثية غير المتاحة للجميع في أي موقع: 4
Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications
MH Park, T Schenk, M Hoffmann, S Knebel, J Gärtner, T Mikolajick, ...
Nano Energy 36, 381-389, 2017
التفويضات: German Research Foundation
Dopants in Atomic Layer Deposited HfO2 Thin Films
MH Park, T Schenk, U Schroeder
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019
التفويضات: German Research Foundation
Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties
MH Park, T Schenk, S Starschich, CM Fancher, HJ Kim, U Böttger, ...
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019
التفويضات: US Department of Energy, German Research Foundation
Impact of Electrodes on the Ferroelectric Properties
MH Park, T Schenk, CS Hwang, U Schroeder
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019
التفويضات: German Research Foundation
عدد المقالات البحثية المتاحة للجميع في موقع ما: 24
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
التفويضات: German Research Foundation
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
التفويضات: German Research Foundation
Next generation ferroelectric materials for semiconductor process integration and their applications
T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ...
Journal of Applied Physics 129 (10), 100901, 2021
التفويضات: Federal Ministry of Education and Research, Germany
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.
U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ...
Inorganic chemistry, 2018
التفويضات: US National Science Foundation, US Department of Defense, German Research …
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ...
Journal of Materials Chemistry C 5 (19), 4677-4690, 2017
التفويضات: US National Science Foundation, US Department of Energy, US Department of …
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
T Mikolajick, S Slesazeck, MH Park, U Schroeder
MRS Bulletin 43 (5), 340-346, 2018
التفويضات: German Research Foundation
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
J Jiang, ZL Bai, ZH Chen, L He, DW Zhang, QH Zhang, JA Shi, MH Park, ...
Nature materials 17 (1), 49-56, 2018
التفويضات: Chinese Academy of Sciences, National Natural Science Foundation of China
Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering
T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ...
Advanced Materials Interfaces 6 (11), 1900042, 2019
التفويضات: US National Science Foundation, European Commission
Si doped hafnium oxide—A “fragile” ferroelectric system
C Richter, T Schenk, MH Park, FA Tscharntke, ED Grimley, JM LeBeau, ...
Advanced Electronic Materials 3 (10), 1700131, 2017
التفويضات: US National Science Foundation, US Department of Energy, US Department of …
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film
Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng, Y Zheng, J Gao, MH Park, ...
Nature Communications 13 (1), 645, 2022
التفويضات: Chinese Academy of Sciences, National Natural Science Foundation of China
On the Origin of the Large Remanent Polarization in La:HfO2
T Schenk, CM Fancher, MH Park, C Richter, C Künneth, A Kersch, ...
Advanced Electronic Materials, 1900303, 2019
التفويضات: US Department of Energy, German Research Foundation, Luxembourg National …
Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction
MH Park, CC Chung, T Schenk, C Richter, K Opsomer, C Detavernier, ...
Advanced Electronic Materials 4 (7), 1800091, 2018
التفويضات: US National Science Foundation, US Department of Defense, German Research …
From ferroelectric material optimization to neuromorphic devices
T Mikolajick, MH Park, L Begon‐Lours, S Slesazeck
Advanced Materials 35 (37), 2206042, 2023
التفويضات: European Commission
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch, MH Park, T Mikolajick, U Schroeder
Inorganic Chemistry Frontiers 8 (10), 2650-2672, 2021
التفويضات: German Research Foundation, Federal Ministry of Education and Research, Germany
Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
MH Park, CC Chung, T Schenk, C Richter, M Hoffmann, S Wirth, JL Jones, ...
Advanced Electronic Materials 4 (4), 1700489, 2018
التفويضات: US National Science Foundation, US Department of Defense, German Research …
Domains and domain dynamics in fluorite-structured ferroelectrics
DH Lee, Y Lee, K Yang, JY Park, SH Kim, PRS Reddy, M Materano, ...
Applied Physics Reviews 8 (2), 2021
التفويضات: US National Science Foundation
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