| Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction X Jiang, J Wang, H Yu, J Chen, Z Zeng, X Yang, ZJ Shen IEEE Transactions on Power Electronics 36 (4), 3757-3768, 2020 | 78 | 2020 |
| Investigation on degradation of SiC MOSFET under accelerated stress in a PFC converter X Jiang, J Wang, J Chen, H Yu, Z Li, ZJ Shen IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020 | 34 | 2020 |
| Numerical study of SiC MOSFET with integrated n-/n-type poly-Si/SiC heterojunction freewheeling diode H Yu, S Liang, H Liu, J Wang, ZJ Shen IEEE Transactions on Electron Devices 68 (9), 4571-4576, 2021 | 30 | 2021 |
| Comparative study of temperature sensitive electrical parameters for junction temperature monitoring in SiC MOSFET and Si IGBT H Yu, X Jiang, J Chen, ZJ Shen, J Wang 2020 IEEE 9th International Power Electronics and Motion Control Conference …, 2020 | 24 | 2020 |
| A novel real-time junction temperature monitoring circuit for SiC MOSFET H Yu, X Jiang, J Chen, J Wang, ZJ Shen 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2605-2609, 2020 | 24 | 2020 |
| Investigation on effects of thermal stress on SiC MOSFET degradation through power cycling tests J Chen, X Jiang, Z Li, H Yu, J Wang, ZJ Shen 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 1106-1110, 2020 | 19 | 2020 |
| Modeling irradiation-induced degradation for 4H-SiC power MOSFETs S Liang, Y Yang, L Shu, Z Wu, B Chen, H Yu, H Liu, L Wang, T Li, G Deng, ... IEEE Transactions on Electron Devices 70 (3), 1176-1180, 2023 | 15 | 2023 |
| A novel 4H-SiC JBS-integrated MOSFET with self-pinching structure for improved short-circuit capability H Yu, J Wang, G Deng, S Liang, H Liu, ZJ Shen IEEE Transactions on Electron Devices 69 (9), 5104-5109, 2022 | 13 | 2022 |
| Coordinated two-stage operation and control for minimizing energy storage capacitors in cascaded boost-buck PFC converters C Zhang, J Wang, S Tang, D Wang, H Yu, Z Li, X Yin, ZJ Shen IEEE Access 8, 191286-191297, 2020 | 13 | 2020 |
| Comparative evaluation of surge current capability of the body diode of SiC JMOS, SiC DMOS, and SiC Schottky barrier diode X Jiang, J Yu, J Chen, H Yu, Z Li, J Wang, ZJ Shen 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 1111-1115, 2020 | 11 | 2020 |
| 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits H Yu, J Wang, S Liang, G Deng, H Liu, B Ji, ZJ Shen IET Power Electronics 15 (14), 1502-1510, 2022 | 9 | 2022 |
| A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode S Liang, H Yu, H Liu, Y Wang, J Wang Semiconductor Science and Technology 36 (9), 095017, 2021 | 9 | 2021 |
| Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs L Shi, J Qian, M Jin, M Bhattacharya, H Yu, A Shimbori, MH White, ... Materials science in semiconductor processing 174, 108194, 2024 | 8 | 2024 |
| An effective screening technique for early oxide failure in SiC power MOSFETs L Shi, J Qian, M Jin, M Bhattacharya, H Yu, MH White, AK Agarwal, ... 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023 | 8 | 2023 |
| Understanding the degradation of 1.2-kV planar-gate SiC MOSFETs under repetitive over-load current stress H Yu, S Liang, J Wang, X Jiang, B Wang, Y Yang, Y Wang, Y Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 7 | 2021 |
| Physical modeling and design optimization of 4H-SiC insulated gate bipolar transistors for dv/dt reduction H Liu, J Wang, S Liang, H Yu, W Deng Semiconductor Science and Technology 36 (2), 025009, 2020 | 7 | 2020 |
| Investigation on degradation of SiC MOSFET under accelerated stress in PFC converter J Chen, X Jiang, Z Li, H Yu, J Wang 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 6174-6178, 2019 | 7 | 2019 |
| An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures J Qian, L Shi, M Jin, M Bhattacharya, A Shimbori, H Yu, S Houshmand, ... Micromachines 15 (2), 177, 2024 | 6 | 2024 |
| Modeling of charge-to-breakdown with an electron trapping model for analysis of thermal gate oxide failure mechanism in SiC power MOSFETs J Qian, L Shi, M Jin, M Bhattacharya, A Shimbori, H Yu, S Houshmand, ... Materials 17 (7), 1455, 2024 | 5 | 2024 |
| Pulse-voltage time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs M Jin, L Shi, J Qian, M Bhattacharya, H Yu, MH White, AK Agarwal, ... 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023 | 5 | 2023 |
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