مقالات بحثية تمّ التفويض بإتاحتها للجميع - Yanqing Wuمزيد من المعلومات
عدد المقالات البحثية غير المتاحة للجميع في أي موقع: 32
Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits
J Yi, X Sun, C Zhu, S Li, Y Liu, X Zhu, W You, D Liang, Q Shuai, Y Wu, ...
Advanced Materials 33 (27), 2101036, 2021
التفويضات: National Natural Science Foundation of China
Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET
X Xiong, A Tong, X Wang, S Liu, X Li, R Huang, Y Wu
2021 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2021
التفويضات: National Natural Science Foundation of China
Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems
X Li, B Yu, B Wang, L Bao, B Zhang, H Li, Z Yu, T Zhang, Y Yang, ...
Nanoscale 12 (30), 16348-16358, 2020
التفويضات: National Natural Science Foundation of China
A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel
Z Liang, K Tang, J Dong, Q Li, Y Zhou, R Zhu, Y Wu, D Han, R Huang
2021 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2021
التفويضات: National Natural Science Foundation of China
Molecular glass resists based on 9, 9′-spirobifluorene derivatives: pendant effect and comprehensive evaluation in extreme ultraviolet lithography
J Chen, Q Hao, S Wang, S Li, T Yu, Y Zeng, J Zhao, S Yang, Y Wu, C Xue, ...
ACS Applied Polymer Materials 1 (3), 526-534, 2019
التفويضات: Chinese Academy of Sciences
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge …
X Ma, YY Liu, L Zeng, J Chen, R Wang, LW Wang, Y Wu, X Jiang
ACS Applied Materials & Interfaces 14 (1), 2185-2193, 2021
التفويضات: National Natural Science Foundation of China
True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO
Q Hu, C Gu, Q Li, S Zhu, S Liu, Y Li, L Zhang, R Huang, Y Wu
Advanced Materials 35 (20), 2210554, 2023
التفويضات: National Natural Science Foundation of China
Nonvolatile logic and ternary content‐addressable memory based on complementary black phosphorus and rhenium disulfide transistors
X Xiong, J Kang, S Liu, A Tong, T Fu, X Li, R Huang, Y Wu
Advanced Materials 34 (48), 2106321, 2022
التفويضات: National Natural Science Foundation of China
Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency
Q Hu, C Gu, S Zhu, Q Li, A Tong, J Kang, R Huang, Y Wu
IEEE Electron Device Letters 44 (1), 60-63, 2022
التفويضات: National Natural Science Foundation of China
Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration
X Xiong, S Liu, H Liu, Y Chen, X Shi, X Wang, X Li, R Huang, Y Wu
2022 International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2022
التفويضات: National Natural Science Foundation of China
Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation
Q Hu, Q Li, S Zhu, C Gu, S Liu, R Huang, Y Wu
2022 International Electron Devices Meeting (IEDM), 26.6. 1-26.6. 4, 2022
التفويضات: National Natural Science Foundation of China
Nonchemically amplified molecular resists based on sulfonium-functionalized sulfone derivatives for sub-13 nm nanolithography
Y Wang, J Chen, Y Zeng, T Yu, S Wang, X Guo, R Hu, P Tian, ...
ACS Applied Nano Materials 6 (19), 18480-18490, 2023
التفويضات: Chinese Academy of Sciences, National Natural Science Foundation of China
Record-high 2Pr=60 μC/cm2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO2 with Large Single Grain of Orthorhombic Phase >38 nm
T Fu, M Zeng, S Liu, H Liu, R Huang, Y Wu
2022 International Electron Devices Meeting (IEDM), 6.5. 1-6.5. 4, 2022
التفويضات: National Natural Science Foundation of China
Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics
X Shi, X Li, Q Guo, H Gao, M Zeng, Y Han, S Yan, Y Wu
Nano Letters 22 (18), 7667-7673, 2022
التفويضات: Chinese Academy of Sciences, National Natural Science Foundation of China
Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors
X Shi, X Li, Q Guo, M Zeng, X Wang, Y Wu
Applied Physics Reviews 10 (1), 2023
التفويضات: Chinese Academy of Sciences, National Natural Science Foundation of China
BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V
Q Li, C Gu, S Zhu, Q Hu, W Zhao, X Li, R Huang, Y Wu
2022 International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2022
التفويضات: National Natural Science Foundation of China
Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics
X Li, Z Zhang, T Gao, X Shi, C Gu, Y Wu
Advanced Functional Materials 32 (46), 2208091, 2022
التفويضات: Chinese Academy of Sciences, National Natural Science Foundation of China
Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors
P Cai, H Li, Z Liu, T Zhu, M Zeng, Z Ji, Y Wu, A Padovani, L Larcher, ...
IEEE Transactions on Electron Devices 69 (5), 2384-2390, 2022
التفويضات: National Natural Science Foundation of China
High-performance short-channel top-gate indium-tin-oxide transistors by optimized gate dielectric
C Gu, Q Hu, S Zhu, Q Li, M Zeng, H Liu, J Kang, S Liu, Y Wu
IEEE Electron Device Letters 44 (5), 837-840, 2023
التفويضات: National Natural Science Foundation of China
High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel
Q Hu, S Zhu, C Gu, Y Wu
Applied Physics Letters 121 (24), 2022
التفويضات: National Natural Science Foundation of China
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