متابعة
Jiyoung Kim
Jiyoung Kim
Professor, Department of Materials Science and Engineering, University of Texas at Dallas
بريد إلكتروني تم التحقق منه على utdallas.edu - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
GaAs interfacial self-cleaning by atomic layer deposition‏
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...‏
Applied Physics Letters 92 (7), 2008‏
4962008
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure‏
A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ...‏
Nano letters 16 (9), 5437-5443, 2016‏
4312016
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics‏
B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim‏
Applied Physics Letters 92 (20), 2008‏
3922008
Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications‏
C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin‏
Chemistry of Materials 20 (3), 756-767, 2008‏
3712008
Metal Contacts on Physical Vapor Deposited Monolayer MoS2‏
C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ...‏
ACS nano 7 (12), 11350-11357, 2013‏
3592013
Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness ‏
H Shin, DK Jeong, J Lee, MM Sung, J Kim‏
Advanced Materials 16 (14), 1197-1200, 2004‏
3502004
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget‏
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...‏
Applied Physics Letters 111 (24), 2017‏
3402017
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability‏
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...‏
ACS nano 7 (11), 10354-10361, 2013‏
3332013
Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance‏
SJ Kim, J Mohan, SR Summerfelt, J Kim‏
JOM 71 (1), 246, 2019‏
322*2019
Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control‏
MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ...‏
ACS Nano 10 (6), 6054-6061, 2016‏
2652016
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy‏
R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...‏
ACS nano 9 (1), 474-480, 2015‏
2602015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics‏
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...‏
Applied Physics Letters 104 (11), 2014‏
2402014
Ozone adsorption on graphene: ab initio study and experimental validation‏
G Lee, B Lee, J Kim, K Cho‏
The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009‏
2232009
Half-cycle atomic layer deposition reaction studies of on (100) surfaces‏
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...‏
Applied Physics Letters 93 (20), 202902, 2008‏
1952008
Remote Plasma Oxidation and Atomic Layer Etching of MoS2‏
H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace‏
ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016‏
1942016
Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states‏
GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu‏
ACS Nano 12 (6), 6292, 2018‏
1852018
Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2‏
DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ...‏
Journal of Vacuum Science & Technology A 28 (5), 1060-1072, 2010‏
1652010
Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing‏
H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace‏
Acs Nano 11 (11), 11005-11014, 2017‏
1622017
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone‏
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...‏
ACS nano 6 (3), 2722-2730, 2012‏
1622012
Effect of film thickness on the ferroelectric and dielectric properties of low temperature (400C) Hf0.5Zr0.5O2 films‏
SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, L Colombo, SR Summerfelt, ...‏
applied physics letters 112 (17), 172902, 2018‏
1582018
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20