| Electronics based on two-dimensional materials G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ... Nature nanotechnology 9 (10), 768-779, 2014 | 3436 | 2014 |
| Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures D McManus, S Vranic, F Withers, V Sanchez-Romaguera, M Macucci, ... Nature nanotechnology 12 (4), 343-350, 2017 | 628 | 2017 |
| Quantum engineering of transistors based on 2D materials heterostructures G Iannaccone, F Bonaccorso, L Colombo, G Fiori Nature nanotechnology 13 (3), 183-191, 2018 | 461 | 2018 |
| Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride S Bruzzone, G Fiori Applied Physics Letters 99 (22), 2011 | 441 | 2011 |
| Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature communications 11 (1), 3385, 2020 | 438 | 2020 |
| Simulation of graphene nanoribbon field-effect transistors G Fiori, G Iannaccone IEEE Electron Device Letters 28 (8), 760-762, 2007 | 402 | 2007 |
| Performance of arsenene and antimonene double-gate MOSFETs from first principles G Pizzi, M Gibertini, E Dib, N Marzari, G Iannaccone, G Fiori Nature communications 7 (1), 12585, 2016 | 330 | 2016 |
| Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs Y Yoon, G Fiori, S Hong, G Iannaccone, J Guo IEEE Transactions on electron devices 55 (9), 2314-2323, 2008 | 215 | 2008 |
| Ultralow-voltage bilayer graphene tunnel FET G Fiori, G Iannaccone IEEE Electron Device Letters 30 (10), 1096-1098, 2009 | 204 | 2009 |
| Electrical properties of graphene-metal contacts T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ... Scientific reports 7 (1), 5109, 2017 | 200 | 2017 |
| Multiscale modeling for graphene-based nanoscale transistors G Fiori, G Iannaccone Proceedings of the IEEE 101 (7), 1653-1669, 2013 | 180 | 2013 |
| Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper S Conti, L Pimpolari, G Calabrese, R Worsley, S Majee, DK Polyushkin, ... Nature communications 11 (1), 3566, 2020 | 172 | 2020 |
| Lateral graphene–hBCN heterostructures as a platform for fully two-dimensional transistors G Fiori, A Betti, S Bruzzone, G Iannaccone Acs Nano 6 (3), 2642-2648, 2012 | 172 | 2012 |
| Current saturation and voltage gain in bilayer graphene field effect transistors BN Szafranek, G Fiori, D Schall, D Neumaier, H Kurz Nano letters 12 (3), 1324-1328, 2012 | 163 | 2012 |
| Wirelessly powered large-area electronics for the Internet of Things L Portilla, K Loganathan, H Faber, A Eid, JGD Hester, MM Tentzeris, ... Nature Electronics 6 (1), 10-17, 2023 | 138 | 2023 |
| Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam Y Katagiri, T Nakamura, A Ishii, C Ohata, M Hasegawa, S Katsumoto, ... Nano letters 16 (6), 3788-3794, 2016 | 133 | 2016 |
| All-2D material inkjet-printed capacitors: toward fully printed integrated circuits R Worsley, L Pimpolari, D McManus, N Ge, R Ionescu, JA Wittkopf, ... Acs Nano 13 (1), 54-60, 2018 | 132 | 2018 |
| Inkjet printed 2D-crystal based strain gauges on paper C Casiraghi, M Macucci, K Parvez, R Worsley, Y Shin, F Bronte, C Borri, ... Carbon 129, 462-467, 2018 | 130 | 2018 |
| A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry G Fiori, G Iannaccone, G Klimeck IEEE Transactions on electron devices 53 (8), 1782-1788, 2006 | 128 | 2006 |
| On the possibility of tunable-gap bilayer graphene FET G Fiori, G Iannaccone IEEE Electron Device Letters 30 (3), 261-264, 2009 | 122 | 2009 |
Giuseppe IannacconeUniversity of Pisa, Italyبريد إلكتروني تم التحقق منه على unipi.it
Massimo MacucciUniversita` di Pisa, Italyبريد إلكتروني تم التحقق منه على mercurio.iet.unipi.itDaniel NeumaierUniversity of Wuppertalبريد إلكتروني تم التحقق منه على uni-wuppertal.de
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHبريد إلكتروني تم التحقق منه على eld.rwth-aachen.de
Luigi ColomboUniversity of Texas at Dallasبريد إلكتروني تم التحقق منه على utdallas.edu
Francesco BonaccorsoBeDimensional S.p.A., Istituto Italiano di Tecnologiaبريد إلكتروني تم التحقق منه على iit.it
Tomás PalaciosMITبريد إلكتروني تم التحقق منه على mit.edu
Alan SeabaughProfessor of Electrical Engineering, University of Notre Dameبريد إلكتروني تم التحقق منه على nd.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue Universityبريد إلكتروني تم التحقق منه على purdue.edu
Nicola MarzariÉcole Polytechnique Fédérale de Lausanne (EPFL), and Paul Scherrer Institut (PSI)بريد إلكتروني تم التحقق منه على epfl.ch
Jing GuoProfessor, University of Floridaبريد إلكتروني تم التحقق منه على ufl.edu
Youngki YoonAssociate Professor, Dept. of Electrical and Computer Engineering, University of Waterlooبريد إلكتروني تم التحقق منه على uwaterloo.ca
Ioannis DeretzisInstitute for Microelectronics and Microsystems (CNR-IMM)بريد إلكتروني تم التحقق منه على imm.cnr.it
Antonino La MagnaCNR IMMبريد إلكتروني تم التحقق منه على imm.cnr.it
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue Universityبريد إلكتروني تم التحقق منه على purdue.edu
Matteo Fornaiuniversità di pisaبريد إلكتروني تم التحقق منه على unipi.it
Armando RosselloFull Professor of Medicinal Chemistry, Università di Pisa, Dipartimento di Farmaciaبريد إلكتروني تم التحقق منه على farm.unipi.it
