| Toward 100% spin–orbit torque efficiency with high spin–orbital Hall conductivity Pt–Cr alloys CY Hu, YF Chiu, CC Tsai, CC Huang, KH Chen, CW Peng, CM Lee, ... ACS Applied Electronic Materials 4 (3), 1099-1108, 2022 | 39 | 2022 |
| Growth-dependent interlayer chiral exchange and field-free switching YH Huang, CC Huang, WB Liao, TY Chen, CF Pai Physical Review Applied 18 (3), 034046, 2022 | 28 | 2022 |
| Large unidirectional magnetoresistance in metallic heterostructures in the spin transfer torque regime TY Chang, CL Cheng, CC Huang, CW Peng, YH Huang, TY Chen, YT Liu, ... Physical Review B 104 (2), 024432, 2021 | 16 | 2021 |
| Anatomy of Type-x Spin-Orbit-Torque Switching YT Liu, CC Huang, KH Chen, YH Huang, CC Tsai, TY Chang, CF Pai Physical Review Applied 16 (2), 024021, 2021 | 13 | 2021 |
| Field-free switching in symmetry-breaking multilayers: the critical role of interlayer chiral exchange YC Li, YH Huang, CC Huang, YT Liu, CF Pai Physical Review Applied 20 (2), 024032, 2023 | 10 | 2023 |
| Processing effect on spin-orbit torque switching and efficiency characterization in perpendicularly magnetized pillar devices WB Liao, CY Lin, TY Cheng, CC Huang, TY Chen, CF Pai Physical Review Materials 7 (10), 104409, 2023 | 4 | 2023 |
| Field-Free Type-x Spin-Orbit-Torque Switching by Easy-Axis Engineering YT Liu, YH Huang, CC Huang, YC Li, CL Cheng, CF Pai Physical Review Applied 18 (3), 034019, 2022 | 4 | 2022 |
| Deep learning for spin-orbit torque characterizations with a projected vector field magnet CC Huang, CC Tsai, WB Liao, TY Chen, CF Pai Physical Review Research 4 (3), 033040, 2022 | 2 | 2022 |
| Memory device and manufacturing method thereof YL Huang, S Mingyuan, CM Lee, SJ Lin, CF Pai, CY Hu, C Huang, ... US Patent 12,156,479, 2024 | 1 | 2024 |
| The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization CY Hu, WD Chen, YT Liu, CC Huang, CF Pai NPG Asia Materials 16 (1), 1, 2024 | 1 | 2024 |
| Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors Y Shao, E Rafie Borujeny, J Navarro Fidalgo, JCC Huang, TE Espedal, ... Nano Letters, 2025 | | 2025 |
| Highly-Scaled BEOL E-Mode Transistor and Discrete-Domain Ferroelectric Memory Platform Enabled by PEALD In2O3 Y Shao, JCC Huang, ER Borujeny, TE Espedal, DA Antoniadis, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Y Huang, M Song, C Lee, S Lin, C Pai, C Hu, C Huang, K Chen, C Tsai, ... US Patent App. 18/786,688, 2024 | | 2024 |
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