| Stability, reliability, and robustness of GaN power devices: A review JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ... IEEE Transactions on Power Electronics 38 (7), 8442-8471, 2023 | 185 | 2023 |
| Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020 | 129 | 2020 |
| True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang IEEE Electron Device Letters, 2021 | 73 | 2021 |
| Dynamic breakdown voltage of GaN power HEMTs R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang 2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020 | 68 | 2020 |
| Robustness of cascode GaN HEMTs in unclamped inductive switching Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021 | 55 | 2021 |
| Degradation of SiC MOSFETs under High-Bias Switching Events JP Kozak, R Zhang, J Liu, KDT Ngo, Y Zhang IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021 | 38 | 2021 |
| Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang IEEE Transactions on Power Electronics 38 (1), 435-446, 2022 | 34 | 2022 |
| Impact of accelerated stress-tests on SiC MOSFET precursor parameters JP Kozak, KDT Ngo, DJ DeVoto, JJ Major 2018 Second International Symposium on 3D Power Electronics Integration and …, 2018 | 34 | 2018 |
| An Analytical Model for Predicting Turn-on Overshoot in Normally-off GaN HEMTs JP Kozak, A Barchowsky, MR Hontz, NB Koganti, W Stanchina, G Reed, ... IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019 | 33 | 2019 |
| Touch screens: A pressing technology T Hoye, J Kozak Tenth Annual Freshman Engineering Sustainability in the New Millennium …, 2010 | 30 | 2010 |
| A GaN-based modular multilevel DC-DC converter for high-density anode discharge power modules A Barchowsky, JP Kozak, BM Grainger, WE Stanchina, GF Reed 2017 IEEE Aerospace Conference, 1-10, 2017 | 27 | 2017 |
| Surge energy robustness of GaN gate injection transistors R Zhang, JP Kozak, J Liu, M Xiao, Y Zhang 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 22 | 2020 |
| Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs A Barchowsky, JP Kozak, MR Hontz, WE Stanchina, GF Reed, ZH Mao, ... 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 1958-1963, 2017 | 22 | 2017 |
| Trends in SiC MOSFET threshold voltage and on-resistance measurements from thermal cycling and electrical switching stresses JP Kozak, DJ DeVoto, JJ Major, KDT Ngo CIPS 2018; 10th International Conference on Integrated Power Electronics …, 2018 | 21 | 2018 |
| Failure mechanisms of cascode GaN HEMTs under overvoltage and surge energy events Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 19 | 2021 |
| Evaluation of 650V, 100A direct-drive GaN power switch for electric vehicle powertrain applications Q Song, JP Kozak, M Xiao, Y Ma, B Wang, R Zhang, R Volkov, K Smith, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 17 | 2021 |
| Robustness of cascode GaN HEMTs under repetitive overvoltage and surge energy stresses Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 363-369, 2021 | 17 | 2021 |
| Robustness of GaN gate injection transistors under repetitive surge energy and overvoltage JP Kozak, Q Song, R Zhang, J Liu, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 16 | 2021 |
| Hard-switched overvoltage robustness of p-gate GaN HEMTs at increasing temperatures JP Kozak, R Zhang, J Liu, Q Song, M Xiao, Y Zhang 2020 IEEE Energy Conversion Congress and Exposition (ECCE), 677-682, 2020 | 13 | 2020 |
| IEEE International Reliability Physics Symposium (IRPS) R Zhang, JP Kozak, J Liu, M Xiao, Y Zhang IEEE, Dallas, TX, USA, 1-4, 2020 | 12 | 2020 |
Yuhao ZhangUniversity of Hong Kongبريد إلكتروني تم التحقق منه على hku.hk