| A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis Materials Science and Engineering: B 34 (2-3), 83-105, 1995 | 582 | 1995 |
| The physics of ohmic contacts to SiC J Crofton, LM Porter, JR Williams physica status solidi (b) 202 (1), 581-603, 1997 | 302 | 1997 |
| High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy KC Chang, NT Nuhfer, LM Porter, Q Wahab Applied Physics Letters 77 (14), 2186-2188, 2000 | 267 | 2000 |
| Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques Y Yao, S Okur, LAM Lyle, GS Tompa, T Salagaj, N Sbrockey, RF Davis, ... Materials Research Letters 6 (5), 268-275, 2018 | 254 | 2018 |
| Observation of a negative electron affinity for boron nitride MJ Powers, MC Benjamin, LM Porter, RJ Nemanich, RF Davis, JJ Cuomo, ... Applied physics letters 67 (26), 3912-3914, 1995 | 213 | 1995 |
| Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals Y Yao, R Gangireddy, J Kim, KK Das, RF Davis, LM Porter Journal of Vacuum Science & Technology B 35 (3), 2017 | 196 | 2017 |
| Investigation of different metals as ohmic contacts to β-Ga2O3: comparison and analysis of electrical behavior, morphology, and other physical properties Y Yao, RF Davis, LM Porter Journal of Electronic Materials 46 (4), 2053-2060, 2017 | 142 | 2017 |
| Inhomogeneities in Ni∕ 4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ... Journal of applied physics 101 (11), 2007 | 111 | 2007 |
| JS Bow, MJ Kim, RW Carpenter and RC Glass LM Porter, RF Davis J. Mater. Res 10, 668, 1995 | 95 | 1995 |
| Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ... Materials science forum 527, 935-948, 2006 | 91 | 2006 |
| Thin Pt films on the polar SrTiO3 (1 1 1) surface: an experimental and theoretical study A Asthagiri, C Niederberger, AJ Francis, LM Porter, PA Salvador, DS Sholl Surface science 537 (1-3), 134-152, 2003 | 75 | 2003 |
| Method of forming platinum ohmic contact to p-type silicon carbide RC Glass, JW Palmour, RF Davis, LS Porter US Patent 5,409,859, 1995 | 75 | 1995 |
| Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface RC Glass, LM Spellman, S Tanaka, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992 | 71 | 1992 |
| High-resolution elemental profiles of the silicon dioxide∕ 4H-silicon carbide interface KC Chang, Y Cao, LM Porter, J Bentley, S Dhar, LC Feldman, JR Williams Journal of applied physics 97 (10), 2005 | 70 | 2005 |
| Platinum ohmic contact to p-type silicon carbide RC Glass, JW Palmour, RF Davis, LS Porter US Patent 5,323,022, 1994 | 65 | 1994 |
| Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes Z Su, L Huang, F Liu, JP Freedman, LM Porter, RF Davis, JA Malen Applied Physics Letters 100 (20), 2012 | 64 | 2012 |
| Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors KC Chang, LM Porter, J Bentley, CY Lu, J Cooper Jr Journal of applied physics 95 (12), 8252-8257, 2004 | 64 | 2004 |
| Defect-driven inhomogeneities in Ni∕ 4H–SiC Schottky barriers S Tumakha, DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, ... Applied Physics Letters 87 (24), 2005 | 62 | 2005 |
| Hydrogen passivation of donors and acceptors in SiC F Gendron, LM Porter, C Porte, E Bringuier Applied physics letters 67 (9), 1253-1255, 1995 | 58 | 1995 |
| Effect of metal contacts on (100) β-Ga2O3 Schottky barriers LAM Lyle, K Jiang, EV Favela, K Das, A Popp, Z Galazka, G Wagner, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 57 | 2021 |
