| Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763-768, 2016 | 68 | 2016 |
| Highly tunable exchange in donor qubits in silicon Y Wang, A Tankasala, LCL Hollenberg, G Klimeck, MY Simmons, ... npj Quantum Information 2 (1), 1-5, 2016 | 58 | 2016 |
| Valley interference and spin exchange at the atomic scale in silicon B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ... Nature communications 11 (1), 6124, 2020 | 35 | 2020 |
| Two-electron states of a group-V donor in silicon from atomistic full configuration interactions A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ... Physical Review B 97 (19), 195301, 2018 | 29 | 2018 |
| Valley filtering in spatial maps of coupling between silicon donors and quantum dots J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ... Physical Review X 8 (3), 031049, 2018 | 25 | 2018 |
| A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm2 Bit Density A Khakifirooz, E Anaya, S Balasubrahmanyam, G Bennett, D Castro, ... IEEE Solid-State Circuits Letters 6, 161-164, 2023 | 16 | 2023 |
| Quantum-kit: simulating shor's factorization of 24-bit number on desktop A Tankasala, H Ilatikhameneh arXiv preprint arXiv:1908.07187, 2019 | 9 | 2019 |
| Shallow dopant pairs in silicon: An atomistic full configuration interaction study A Tankasala, B Voisin, Z Kembrey, J Salfi, YL Hsueh, EN Osika, S Rogge, ... Physical Review B 105 (15), 155158, 2022 | 7 | 2022 |
| Atomistic configuration interaction simulations of two-electron states of donors in silicon A Tankasala, Y Wang, G Klimeck, R Rahman APS March Meeting Abstracts 2015, A37. 011, 2015 | 7 | 2015 |
| Valley population of donor states in highly strained silicon B Voisin, KSH Ng, J Salfi, M Usman, JC Wong, A Tankasala, BC Johnson, ... Materials for Quantum Technology 2 (2), 025002, 2022 | 4 | 2022 |
| Phonon induced two-electron relaxation in two donor qubits in silicon Y Hsueh, A Tankasala, Y Wang, G Klimeck, M Simmons, R Rahman APS March Meeting Abstracts 2016, Y5. 008, 2016 | 4 | 2016 |
| Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot TA Ameen, H Ilatikhameneh, A Tankasala, Y Hsueh, J Charles, J Fonseca, ... Beilstein Journal of Nanotechnology 9 (1), 1075-1084, 2018 | 3 | 2018 |
| Engineering multi-electron interactions for quantum logic in silicon A Tankasala Purdue University, 2017 | 2 | 2017 |
| Large exchange tunability with lateral electric fields in multi-donor silicon qubits Y Wang, A Tankasala, LCL Hollenberg, G Klimeck, MY Simmons, ... unpublished, 0 | 2 | |
| Multiscale-multiphysics modeling of nonpolar InGaN LEDs MRK Nishat, A Tankasala, N Kharche, R Rahman, SS Ahmed 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 85-88, 2017 | 1 | 2017 |
| Atomically precise control of a coupled donor-quantum dot system in silicon J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, M Simmons, ... APS March Meeting Abstracts 2017, R52. 004, 2017 | 1 | 2017 |
| Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots T Ameen, H Ilatikhameneh, Y Hsueh, J Charles, J Fonseca, M Povolotskyi, ... arXiv preprint arXiv:1502.07726, 2015 | 1 | 2015 |
| Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool G Klimeck | | 2016 |
| Atomistic Configuration Interaction Simulation Tool for Semiconductor Based Quantum Computing Devices J Wu, A Tankasala, J Fonseca, R Rahman, G Klimeck | | 2016 |
| Atomistic simulations of negatively charged donor states probed in STM experiments A Tankasala, J Salfi, S Rogge, G Klimeck, R Rahman APS March Meeting Abstracts 2016, P45. 007, 2016 | | 2016 |
Rajib RahmanProfessor of Physics, University of New South Walesبريد إلكتروني تم التحقق منه على unsw.edu.au