متابعة
Douglas A. Buchanan
Douglas A. Buchanan
University of Manitoba, IBM
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عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
CMOS scaling into the nanometer regime‏
Y Taur, DA Buchanan, W Chen, DJ Frank, KE Ismail, SH Lo, ...‏
Proceedings of the IEEE 85 (4), 486-504, 1997‏
13031997
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's‏
SH Lo, DA Buchanan, Y Taur, W Wang‏
IEEE electron device letters 18 (5), 209-211, 1997‏
11711997
Precursor source mixtures‏
DA Buchanan, DA Neumayer‏
US Patent 6,984,591, 2006‏
6512006
Scaling the gate dielectric: materials, integration, and reliability‏
DA Buchanan‏
IBM journal of research and development 43 (3), 245-264, 1999‏
5471999
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues‏
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...‏
Microelectronic Engineering 59 (1-4), 341-349, 2001‏
5242001
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen‏
E Cartier, JH Stathis, DA Buchanan‏
Applied physics letters 63 (11), 1510-1512, 1993‏
5001993
Volatile and non-volatile memories in silicon with nano-crystal storage‏
S Tiwari, F Rana, K Chan, H Hanafi, W Chan, D Buchanan‏
Proceedings of International Electron Devices Meeting, 521-524, 1995‏
4291995
Ultrathin high-K gate stacks for advanced CMOS devices‏
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...‏
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001‏
3942001
Diamond-like carbon films from a hydrocarbon helium plasma‏
FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ...‏
US Patent 5,470,661, 1995‏
3091995
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides‏
SH Lo, DA Buchanan, Y Taur‏
IBM Journal of Research and Development 43 (3), 327-337, 1999‏
2981999
Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides‏
F Rana, S Tiwari, DA Buchanan‏
Applied physics letters 69 (8), 1104-1106, 1996‏
2751996
Anode hole injection and trapping in silicon dioxide‏
DJ DiMaria, E Cartier, DA Buchanan‏
Journal of applied physics 80 (1), 304-317, 1996‏
2731996
CMOS scaling into the 21st century: 0.1 µm and beyond‏
Y Taur, YJ Mii, DJ Frank, HS Wong, DA Buchanan, SJ Wind, SA Rishton, ...‏
IBM Journal of Research and Development 39 (1.2), 245-260, 1995‏
1871995
Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors‏
DA Buchanan, DJ DiMaria‏
Journal of applied physics 67 (12), 7439-7452, 1990‏
1851990
80 nm polysilicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications‏
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...‏
Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International …, 2000‏
179*2000
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment‏
A Callegari, PD Hoh, DA Buchanan, D Lacey‏
Applied Physics Letters 54 (4), 332-334, 1989‏
1751989
Interfacial oxidation process for high-k gate dielectric process integration‏
AW Ballantine, DA Buchanan, EA Cartier, KK Chan, MW Copel, ...‏
US Patent 6,444,592, 2002‏
1502002
Interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface‏
DJ DiMaria, DA Buchanan, JH Stathis, RE Stahlbush‏
Journal of applied physics 77 (5), 2032-2040, 1995‏
1161995
Hot‐electron‐induced hydrogen redistribution and defect generation in metal‐oxide‐semiconductor capacitors‏
DA Buchanan, AD Marwick, DJ DiMaria, L Dori‏
Journal of applied physics 76 (6), 3595-3608, 1994‏
1141994
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS‏
DA Buchanan, SH Lo‏
Microelectronic Engineering 36 (1-4), 13-20, 1997‏
1101997
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مقالات 1–20