| Nanoscale memristor device as synapse in neuromorphic systems SH Jo, T Chang, I Ebong, BB Bhadviya, P Mazumder, W Lu Nano letters 10 (4), 1297-1301, 2010 | 4683 | 2010 |
| Short-term memory to long-term memory transition in a nanoscale memristor T Chang, SH Jo, W Lu ACS nano 5 (9), 7669-7676, 2011 | 1072 | 2011 |
| High-density crossbar arrays based on a Si memristive system SH Jo, KH Kim, W Lu Nano letters 9 (2), 870-874, 2009 | 793 | 2009 |
| CMOS compatible nanoscale nonvolatile resistance switching memory SH Jo, W Lu Nano letters 8 (2), 392-397, 2008 | 583 | 2008 |
| Synaptic behaviors and modeling of a metal oxide memristive device T Chang, SH Jo, KH Kim, P Sheridan, S Gaba, W Lu Applied physics A 102, 857-863, 2011 | 477 | 2011 |
| Programmable resistance switching in nanoscale two-terminal devices SH Jo, KH Kim, W Lu Nano letters 9 (1), 496-500, 2009 | 440 | 2009 |
| Nanoscale resistive memory with intrinsic diode characteristics and long endurance KH Kim, S Hyun Jo, S Gaba, W Lu Applied Physics Letters 96 (5), 2010 | 287 | 2010 |
| 3D-stackable crossbar resistive memory based on field assisted superlinear threshold (FAST) selector SH Jo, T Kumar, S Narayanan, WD Lu, H Nazarian 2014 IEEE international electron devices meeting, 6.7. 1-6.7. 4, 2014 | 207 | 2014 |
| Silicon-based nanoscale resistive device with adjustable resistance W Lu, SH Jo, KH Kim US Patent 8,687,402, 2014 | 206 | 2014 |
| Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects SH Jo, KH Kim, J Bettinger US Patent 9,570,683, 2017 | 173 | 2017 |
| Silicon based nanoscale crossbar memory W Lu, SH Jo, KH Kim US Patent 8,071,972, 2011 | 142 | 2011 |
| Cross-point resistive RAM based on field-assisted superlinear threshold selector SH Jo, T Kumar, S Narayanan, H Nazarian IEEE Transactions on Electron Devices 62 (11), 3477-3481, 2015 | 129 | 2015 |
| Si memristive devices applied to memory and neuromorphic circuits SH Jo, KH Kim, T Chang, S Gaba, W Lu Proceedings of 2010 IEEE International Symposium on Circuits and Systems, 13-16, 2010 | 127 | 2010 |
| Rectification element and method for resistive switching for non volatile memory device W Lu, SH Jo US Patent 8,351,241, 2013 | 126 | 2013 |
| Nanoscale memristive devices for memory and logic applications SH Jo University of Michigan, 2010 | 113 | 2010 |
| Two terminal resistive switching device structure and method of fabricating SH Jo, SB Herner US Patent 9,012,307, 2015 | 102 | 2015 |
| Intrinsic Programming Current Control for a RRAM SH Jo, W Lu US Patent App. 12/834,610, 2012 | 101 | 2012 |
| Device switching using layered device structure SH Jo, W Lu US Patent 8,884,261, 2014 | 95 | 2014 |
| Interface control for improved switching in RRAM SH Jo, H Nazarian, W Lu US Patent 8,441,835, 2013 | 92 | 2013 |
| Nonvolatile Resistive Switching Devices Based on Nanoscale Metal/Amorphous Silicon/Crystalline Silicon Junctions SH Jo, W Lu MRS Online Proceedings Library (OPL) 997, 0997-I04-05, 2007 | 83 | 2007 |
