متابعة
Heejun Yang
Heejun Yang
Professor, KAIST Physics, Korea
بريد إلكتروني تم التحقق منه على kaist.ac.kr - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Phase patterning for ohmic homojunction contact in MoTe2‏
S Cho, S Kim, JH Kim, J Zhao, J Seok, DH Keum, J Baik, DH Choe, ...‏
Science 349 (6248), 625-628, 2015‏
12022015
Graphene barristor, a triode device with a gate-controlled Schottky barrier‏
H Yang, J Heo, S Park, HJ Song, DH Seo, KE Byun, P Kim, IK Yoo, ...‏
Science 336 (6085), 1140-1143, 2012‏
11352012
Bandgap opening in few-layered monoclinic MoTe2‏
DH Keum, S Cho, JH Kim, DH Choe, HJ Sung, M Kan, H Kang, JY Hwang, ...‏
Nature Physics 11 (6), 482-486, 2015‏
10542015
Structural and quantum-state phase transitions in van der Waals layered materials‏
H Yang, SW Kim, M Chhowalla, YH Lee‏
Nature Physics 13 (10), 931-937, 2017‏
3882017
In-sensor reservoir computing for language learning via two-dimensional memristors‏
L Sun, Z Wang, J Jiang, Y Kim, B Joo, S Zheng, S Lee, WJ Yu, BS Kong, ...‏
Science advances 7 (20), eabg1455, 2021‏
3112021
Self-selective van der Waals heterostructures for large scale memory array‏
L Sun, Y Zhang, G Han, G Hwang, J Jiang, B Joo, K Watanabe, ...‏
Nature communications 10 (1), 3161, 2019‏
2052019
Synaptic computation enabled by joule heating of single-layered semiconductors for sound localization‏
L Sun, Y Zhang, G Hwang, J Jiang, D Kim, YA Eshete, R Zhao, H Yang‏
Nano letters 18 (5), 3229-3234, 2018‏
1752018
Graphene-passivated nickel as an oxidation-resistant electrode for spintronics‏
B Dlubak, MB Martin, RS Weatherup, H Yang, C Deranlot, R Blume, ...‏
ACS nano 6 (12), 10930-10934, 2012‏
1662012
Quantum interference channeling at graphene edges‏
H Yang, AJ Mayne, M Boucherit, G Comtet, G Dujardin, Y Kuk‏
Nano letters 10 (3), 943-947, 2010‏
1412010
Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes‏
MB Martin, B Dlubak, RS Weatherup, H Yang, C Deranlot, ...‏
Acs Nano 8 (8), 7890-7895, 2014‏
1362014
Graphene for true ohmic contact at metal–semiconductor junctions‏
KE Byun, HJ Chung, J Lee, H Yang, HJ Song, J Heo, DH Seo, S Park, ...‏
Nano letters 13 (9), 4001-4005, 2013‏
1242013
Active hydrogen evolution through lattice distortion in metallic MoTe2‏
J Seok, JH Lee, S Cho, B Ji, HW Kim, M Kwon, D Kim, YM Kim, SH Oh, ...‏
2D Materials 4 (2), 025061, 2017‏
1202017
Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition‏
J Heo, HJ Chung, SH Lee, H Yang, DH Seo, JK Shin, UI Chung, S Seo, ...‏
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035421, 2011‏
1062011
Protecting nickel with graphene spin-filtering membranes: A single layer is enough‏
MB Martin, B Dlubak, RS Weatherup, M Piquemal-Banci, H Yang, ...‏
Applied Physics Letters 107 (1), 2015‏
942015
Long-Range Lattice Engineering of MoTe2 by a 2D Electride‏
S Kim, S Song, J Park, HS Yu, S Cho, D Kim, J Baik, DH Choe, KJ Chang, ...‏
Nano letters 17 (6), 3363-3368, 2017‏
912017
Band gap opening by two-dimensional manifestation of Peierls instability in graphene‏
SH Lee, HJ Chung, J Heo, H Yang, J Shin, UI Chung, S Seo‏
Acs Nano 5 (4), 2964-2969, 2011‏
892011
Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition‏
I Jeon, H Yang, SH Lee, J Heo, DH Seo, J Shin, UI Chung, ZG Kim, ...‏
Acs Nano 5 (3), 1915-1920, 2011‏
832011
Recent progress in synaptic devices based on 2D materials‏
L Sun, W Wang, H Yang‏
Advanced Intelligent Systems 2 (5), 1900167, 2020‏
762020
Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications‏
L Sun, G Hwang, W Choi, G Han, Y Zhang, J Jiang, S Zheng, K Watanabe, ...‏
Nano Energy 69, 104472, 2020‏
682020
Patterning of ferroelectric nanodot arrays using a silicon nitride shadow mask‏
HJ Shin, JH Choi, HJ Yang, YD Park, Y Kuk, CJ Kang‏
Applied Physics Letters 87 (11), 2005‏
602005
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مقالات 1–20