| Electromigration-induced stress in aluminum conductor lines measured by x-ray microdiffraction PC Wang, GS Cargill III, IC Noyan, CK Hu Applied Physics Letters 72 (11), 1296-1298, 1998 | 202 | 1998 |
| Metal adhesion by induced surface roughness DL DeGraw, PJ Lindgren, DY Shih, PC Wang US Patent 8,039,314, 2011 | 186 | 2011 |
| Electromigration threshold in copper interconnects PC Wang, RG Filippi Applied Physics Letters 78 (23), 3598-3600, 2001 | 154 | 2001 |
| Foundation of RF CMOS and SiGe BiCMOS technologies JS Dunn, DC Ahlgren, DD Coolbaugh, NB Feilchenfeld, G Freeman, ... IBM Journal of Research and Development 47 (2.3), 101-138, 2003 | 134 | 2003 |
| Process of enclosing via for improved reliability in dual damascene interconnects PC Wang, RG Filippi, RD Edwards, EW Kiewra, RC Iggulden US Patent 6,383,920, 2002 | 117 | 2002 |
| Characterization of “Ultrathin-Cu”/Ru (Ta)/TaN liner stack for copper interconnects CC Yang, S Cohen, T Shaw, PC Wang, T Nogami, D Edelstein IEEE Electron Device Letters 31 (7), 722-724, 2010 | 87 | 2010 |
| Gas dielectric structure forming methods RG Filippi, RC Iggulden, EW Kiewra, PC Wang US Patent 7,560,375, 2009 | 87 | 2009 |
| Semiconductor structure with liner CC Yang, PC Wang US Patent App. 11/565,810, 2008 | 62 | 2008 |
| Integrated circuit (IC) test structure with monitor chain and test wires AT Kim, CJ Christiansen, PC Wang US Patent 9,435,852, 2016 | 59 | 2016 |
| 3D chip-stack with fuse-type through silicon via K Di Feng, LLC Hsu, PC Wang, Z Yang US Patent 7,816,945, 2010 | 57 | 2010 |
| Deformation field in single-crystal fields semiconductor substrates caused by metallization features IC Noyan, PC Wang, SK Kaldor, JL Jordan-Sweet Applied Physics Letters 74 (16), 2352-2354, 1999 | 51 | 1999 |
| Three-dimensional chip-stack synchronization PC Wang, AR Bonaccio, JR Guo, LLC Hsu US Patent 7,863,960, 2011 | 50 | 2011 |
| Electromigration immune through-substrate vias RG Filippi, JA Fitzsimmons, K Kolvenbach, PC Wang US Patent 8,304,863, 2012 | 49 | 2012 |
| Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications AJ Joseph, JD Gillis, M Doherty, PJ Lindgren, RA Previti-Kelly, ... IBM Journal of Research and Development 52 (6), 635-648, 2008 | 49 | 2008 |
| Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density JS Rieh, KM Watson, F Guarin, Z Yang, PC Wang, AJ Joseph, G Freeman, ... IEEE transactions on device and materials reliability 3 (2), 31-38, 2003 | 48 | 2003 |
| Configurable interposer O Gluschenkov, Y Song, TH Ting, PC Wang US Patent 8,237,278, 2012 | 45 | 2012 |
| Interconnect structure with bi-layer metal cap CC Yang, K Chanda, PC Wang US Patent 7,745,282, 2010 | 44 | 2010 |
| Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction PM Mooney, JL Jordan-Sweet, IC Noyan, SK Kaldor, PC Wang Applied physics letters 74 (5), 726-728, 1999 | 44 | 1999 |
| Interconnect structure having enhanced electromigration reliability and a method of fabricating same CC Yang, PC Wang, YY Wang US Patent 7,569,475, 2009 | 42 | 2009 |
| A 0.35 μm SiGe BiCMOS technology for power amplifier applications A Joseph, Q Liu, W Hodge, P Gray, K Stein, R Previti-Kelly, P Lindgren, ... 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 198-201, 2007 | 41 | 2007 |