مقالات بحثية تمّ التفويض بإتاحتها للجميع - Yuhao Zhangمزيد من المعلومات
عدد المقالات البحثية غير المتاحة للجميع في أي موقع: 35
Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
Xu Zhang, Jesús Grajal, Jose Luis Vazquez-Roy, Ujwal Radhakrishna, Xiaoxue ...
Nature, 2019
التفويضات: US National Science Foundation, US Department of Defense
High-performance GaN vertical fin power transistors on bulk GaN substrates
M Sun, Y Zhang, X Gao, T Palacios
IEEE Electron Device Letters 38 (4), 509-512, 2017
التفويضات: US National Science Foundation, US Department of Energy
Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2
Noah Allen, Ming Xiao, Xiaodong Yan, Kohei Sasaki, Marko J. Tadjer, Jiahui ...
IEEE Electron Device Letters, 2019
التفويضات: Netherlands Organisation for Scientific Research
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang, Zhihong Liu, Marko J Tadjer, Min Sun, Daniel Piedra ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
التفويضات: US Department of Energy, US Department of Defense
720-V/0.35-m cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios
IEEE Electron Device Letters 39 (5), 715-718, 2018
التفويضات: US Department of Energy
(Ultra) Wide-bandgap vertical power FinFETs
Y Zhang, T Palacios
IEEE Transactions on Electron Devices 67 (10), 3960-3971, 2020
التفويضات: US Department of Energy
High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes
Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Lett. 38 (2), 248-251, 2017
التفويضات: US Department of Energy
First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process
Wenhui Xu, Yibo Wang, Tiangui You, Xin Ou, Genquan Han, Haodong Hu, Shibin ...
2019 IEEE International Electron Devices Meeting (IEDM), 2019
التفويضات: National Natural Science Foundation of China
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
التفويضات: US Department of Energy
Design and Simulation of GaN Superjunction Transistors with 2DEG Channels and Fin Channels
Ming Xiao, Ruizhe Zhang, Dong Dong, Han Wang, Yuhao Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
التفويضات: US National Science Foundation, US Department of Defense
Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching
Qihao Song, Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang
IEEE Transactions on Power Electronics, 2021
التفويضات: US Department of Energy
Analysis of Voltage Sharing of Series-Connected High Voltage SiC MOSFETs and Body-Diodes
Xiang Lin, Lakshmi Ravi, Yuhao Zhang, Rolando Burgos, Dong Dong
IEEE Transactions on Power Electronics, 2020
التفويضات: US Department of Energy
Switching Performance Analysis of Vertical GaN FinFETs: Impact of Inter-Fin Designs
Hengyu Wang, Ming Xiao, Kuang Sheng, Tomas Palacios, Yuhao Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
التفويضات: US Department of Energy
5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode
M Xiao, Y Ma, Z Du, X Yan, R Zhang, K Cheng, K Liu, A Xie, E Beam, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2020
التفويضات: Netherlands Organisation for Scientific Research
On-Resistance in Vertical Power FinFETs
Ming Xiao, Tomas Palacios, Yuhao Zhang
IEEE Transactions on Electron Devices 66 (9), 3903-3909, 2019
التفويضات: US Department of Energy
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching near Breakdown Voltage
Joseph P. Kozak, Qihao Song, Ruizhe Zhang, Yunwei Ma, Jingcun Liu, Qiang Li ...
IEEE Transactions on Power Electronics, 2022
التفويضات: US National Science Foundation
Output capacitance loss of GaN HEMTs in steady-state switching
Q Song, R Zhang, Q Li, Y Zhang
IEEE Transactions on Power Electronics 39 (5), 5547-5557, 2023
التفويضات: US Department of Energy
Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
التفويضات: US Department of Energy
Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 363-369, 2021
التفويضات: US Department of Energy
Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage
JP Kozak, Q Song, R Zhang, J Liu, Y Zhang
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
التفويضات: US Department of Energy
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