| Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ... Scientific reports 3 (1), 1757, 2013 | 137 | 2013 |
| A SEM-EBIC minority-carrier diffusion-length measurement technique DE Ioannou, CA Dimitriadis IEEE Transactions on Electron Devices 29 (3), 445-450, 1982 | 135 | 1982 |
| Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ... ACS applied materials & interfaces 7 (2), 1180-1187, 2015 | 131 | 2015 |
| Adaptation of the charge pumping technique to gated pin diodes fabricated on silicon on insulator T Ouisse, S Cristoloveanu, T Elewa, H Haddara, G Borel, DE Ioannou IEEE transactions on electron devices 38 (6), 1432-1444, 1991 | 100 | 1991 |
| Modeling early breakdown failures of gate oxide in SiC power MOSFETs Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ... IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016 | 97 | 2016 |
| Characterization of carrier generation in enhancement-mode SOI MOSFET's DE Ioannou, S Cristoloveanu, M Mukherjee, B Mazhari IEEE Electron Device Letters 11 (9), 409-411, 1990 | 94 | 1990 |
| Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's B Mazhari, S Cristoloveanu, DE Ioannou, AL Caviglia IEEE transactions on electron devices 38 (6), 1289-1295, 1991 | 87 | 1991 |
| Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies AA Salman, SG Beebe, M Emam, MM Pelella, DE Ioannou 2006 International Electron Devices Meeting, 1-4, 2006 | 83 | 2006 |
| The effect of heat treatment on Au Schottky contacts on β-SiC DE Ioannou, NA Papanicolaou, PE Nordquist IEEE transactions on electron devices 34 (8), 1694-1699, 1987 | 72 | 1987 |
| Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs S Cristoloveanu, SM Gulwadi, DE Ioannou, GJ Campisi, HL Hughes IEEE electron device letters 13 (12), 603-605, 1992 | 67 | 1992 |
| Formation of buried insulating layers in silicon by the implantation of high doses of oxygen JA P.L.F. Hemment, E. Maydell-Ondrusz, K.G. Stephens, J. Butcher, D. Ioannou Nuclear Instruments and Methods in Physics Research 209 (Part 1), 157-164, 1983 | 67 | 1983 |
| Silicon nanowire on oxide/nitride/oxide for memory application Q Li, X Zhu, HD Xiong, SM Koo, DE Ioannou, JJ Kopanski, JS Suehle, ... Nanotechnology 18 (23), 235204, 2007 | 61 | 2007 |
| SOI field-effect diode DRAM cell: Design and operation AZ Badwan, Z Chbili, Y Yang, AA Salman, Q Li, DE Ioannou IEEE electron device letters 34 (8), 1002-1004, 2013 | 60 | 2013 |
| Diffusion length evaluation of boron-implanted silicon using the SEM-EBIC/Schottky diode technique DE Ioannou, SM Davidson Journal of Physics D: Applied Physics 12 (8), 1339-1344, 1979 | 60 | 1979 |
| Fabrication, characterization and simulation of high performance Si nanowire-basednon-volatile memory cells X Zhu, Q Li, DE Ioannou, D Gu, JE Bonevich, H Baumgart, JS Suehle, ... Nanotechnology 22 (25), 254020, 2011 | 39 | 2011 |
| Bias temperature instability in High-κ/metal gate transistors-Gate stack scaling trends S Krishnan, V Narayanan, E Cartier, D Ioannou, K Zhao, T Ando, U Kwon, ... 2012 IEEE international reliability physics symposium (IRPS), 5A. 1.1-5A. 1.6, 2012 | 38 | 2012 |
| Scaling of the SOI field effect diode (FED) for memory application Y Yang, A Gangopadhyay, Q Li, DE Ioannou 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | 38 | 2009 |
| Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications DE Ioannou, FL Duan, SP Sinha, A Zaleski IEEE Transactions on Electron Devices 45 (5), 1147-1154, 1998 | 38 | 1998 |
| Surface potential at threshold in thin-film SOI MOSFET's B Mazhari, DE Ioannou IEEE transactions on electron devices 40 (6), 1129-1133, 1993 | 38 | 1993 |
| Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET's SP Sinha, A Zaleski, DE Ioannou IEEE Transactions on Electron devices 41 (12), 2413-2416, 1994 | 37 | 1994 |
Qiliang LiProfessor, Advanced Manufacturing and Robotics, Peking Univ.; (past) George Mason Univ. ; NISTبريد إلكتروني تم التحقق منه على pku.edu.cn
