| Sputtering by particle bombardment I R Behrisch Sputtering by Particle Bombardment I: Physical Sputtering of Single-Element …, 1981 | 1444 | 1981 |
| In search of the most relevant parameter for quantifying lung inflammatory response to nanoparticle exposure: particle number, surface area, or what? K Wittmaack Environmental health perspectives 115 (2), 187-194, 2007 | 357 | 2007 |
| Elemental composition and sources of fine and ultrafine ambient particles in Erfurt, Germany J Cyrys, M Stölzel, J Heinrich, WG Kreyling, N Menzel, K Wittmaack, ... Science of the Total Environment 305 (1-3), 143-156, 2003 | 217 | 2003 |
| Beam-induced broadening effects in sputter depth profiling K Wittmaack Vacuum 34 (1-2), 119-137, 1984 | 199 | 1984 |
| Oxygen-concentration dependence of secondary ion yield enhancement K Wittmaack Surface Science 112 (1-2), 168-180, 1981 | 176 | 1981 |
| Model calculation of ion collection in the presence of sputtering: I. Zero order approximation F Schulz, K Wittmaack Radiation Effects 29 (1), 31-40, 1976 | 170 | 1976 |
| Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment K Wittmaack Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (3 …, 1990 | 153 | 1990 |
| Secondary ion mass spectrometry as a means of surface analysis K Wittmaack Surface Science 89 (1-3), 668-700, 1979 | 139 | 1979 |
| Aspects of quantitative secondary ion mass spectrometry K Wittmaack̀ Nuclear Instruments and Methods 168 (1-3), 343-356, 1980 | 118 | 1980 |
| An AES-SIMS study of silicon oxidation induced by ion or electron bombardment W Reuter, K Wittmaack Applications of Surface Science 5 (3), 221-242, 1980 | 116 | 1980 |
| Energy and fluence dependence of the sputtering yield of silicon bombarded with argon and xenon P Blank, K Wittmaack Journal of Applied Physics 50 (3), 1519-1528, 1979 | 115 | 1979 |
| Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions K Wittmaack, W Wach Nuclear Instruments and Methods in Physics Research 191 (1-3), 327-334, 1981 | 114 | 1981 |
| Secondary ion emission from silicon and silicon oxide J Maul, K Wittmaack Surface Science 47 (1), 358-369, 1975 | 114 | 1975 |
| An overview on bioaerosols viewed by scanning electron microscopy K Wittmaack, H Wehnes, U Heinzmann, R Agerer Science of the Total Environment 346 (1-3), 244-255, 2005 | 113 | 2005 |
| Design and performance of quadrupole-based SIMS instruments: a critical review K Wittmaack Vacuum 32 (2), 65-89, 1982 | 109 | 1982 |
| Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solids F Schulz, K Wittmaack, J Maul Radiation Effects 18 (3-4), 211-215, 1973 | 104 | 1973 |
| On the mechanism of cluster emission in sputtering K Wittmaack Physics Letters A 69 (5), 322-325, 1979 | 101 | 1979 |
| Energy dependence of the secondary ion yield of metals and semiconductors K Wittmaack Surface Science 53 (1), 626-635, 1975 | 97 | 1975 |
| Raster scanning depth profiling of layer structures K Wittmaack Applied physics 12, 149-156, 1977 | 94 | 1977 |
| Primary‐ion charge compensation in SIMS analysis of insulators K Wittmaack Journal of applied physics 50 (1), 493-497, 1979 | 93 | 1979 |
