متابعة
Nicolas C. Rouger
Nicolas C. Rouger
Senior Scientist at Université de Toulouse, LAPLACE, CNRS, INPT, UPS, F-31071 Toulouse, France
بريد إلكتروني تم التحقق منه على laplace.univ-tlse.fr - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Diamond power devices: state of the art, modelling, figures of merit and future perspective‏
N Donato, N Rouger, J Pernot, G Longobardi, F Udrea‏
Journal of Physics D: Applied Physics 53 (9), 093001, 2019‏
2592019
Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement‏
R Boeck, NAF Jaeger, N Rouger, L Chrostowski‏
Optics express 18 (24), 25151-25157, 2010‏
1532010
Temperature effects on silicon-on-insulator (SOI) racetrack resonators: A coupled analytic and 2-D finite difference approach‏
N Rouger, L Chrostowski, R Vafaei‏
Journal of Lightwave Technology 28 (9), 1380-1391, 2010‏
702010
Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor‏
TT Pham, J Pernot, G Perez, D Eon, E Gheeraert, N Rouger‏
IEEE Electron Device Letters 38 (11), 1571-1574, 2017‏
662017
Deep depletion concept for diamond MOSFET‏
TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ...‏
Applied Physics Letters 111 (17), 173503, 2017‏
642017
Loss free gate driver unipolar power supply for high side power transistors‏
JC Crébier, N Rouger‏
IEEE Transactions on Power Electronics 23 (3), 1565-1573, 2008‏
562008
Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistors‏
N Herbecq, I Roch‐Jeune, A Linge, M Zegaoui, PO Jeannin, N Rouger, ...‏
physica status solidi (a) 213 (4), 873-877, 2016‏
552016
Diamond semiconductor performances in power electronics applications‏
G Perez, A Maréchal, G Chicot, P Lefranc, PO Jeannin, D Eon, N Rouger‏
Diamond and Related Materials 110, 108154, 2020‏
542020
A gate driver with integrated deadtime controller‏
R Grezaud, F Ayel, N Rouger, JC Crebier‏
IEEE Transactions on Power Electronics 31 (12), 8409-8421, 2016‏
482016
Model implementation towards the prediction of J (V) characteristics in diamond bipolar device simulations‏
A Maréchal, N Rouger, JC Crebier, J Pernot, S Koizumi, T Teraji, ...‏
Diamond and Related Materials 43, 34-42, 2014‏
482014
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance‏
TT Pham, A Maréchal, P Muret, D Eon, E Gheeraert, N Rouger, J Pernot‏
Journal of Applied Physics 123 (16), 161523, 2018‏
462018
Toward generic fully integratedgate driver power supplies‏
N Rouger, JC Crebier‏
IEEE Transactions on Power Electronics 23 (4), 2106-2114, 2008‏
442008
Optimal drift region for diamond power devices‏
G Chicot, D Eon, N Rouger‏
Diamond and Related Materials 69, 68-73, 2016‏
432016
CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors‏
P Bau, M Cousineau, B Cougo, F Richardeau, N Rouger‏
IEEE Transactions on Power Electronics 35 (12), 13322-13332, 2020‏
402020
Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors‏
C Masante, N Rouger, J Pernot‏
Journal of Physics D: Applied Physics 54 (23), 233002, 2021‏
392021
Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter‏
G Perez, G Chicot, Y Avenas, P Lefranc, PO Jeannin, D Eon, N Rouger‏
Diamond and Related Materials 78, 83-87, 2017‏
342017
A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors‏
P Bau, M Cousineau, B Cougo, F Richardeau, D Colin, N Rouger‏
2018 14th Conference on Ph. D. Research in Microelectronics and Electronics …, 2018‏
312018
Design of Diamond Power Devices: Application to Schottky Barrier Diodes‏
N Rouger, A Maréchal‏
Energies 12 (12), 2387, 2019‏
302019
200V, 4MV/cm lateral diamond MOSFET‏
TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ...‏
2017 IEEE International Electron Devices Meeting (IEDM), 2017‏
302017
High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication‏
TT Pham, M Gutiérrez, C Masante, N Rouger, D Eon, E Gheeraert, ...‏
Applied Physics Letters 112 (10), 102103, 2018‏
272018
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مقالات 1–20