متابعة
Tyler Growden
Tyler Growden
Research scientist, US Naval Research Laboratory
بريد إلكتروني تم التحقق منه على nrl.navy.mil
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy‏
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...‏
Applied Physics Letters 109 (8), 2016‏
702016
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures‏
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger‏
Light: Science & Applications 7 (2), 17150-17150, 2018‏
642018
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes‏
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...‏
Applied physics letters 112 (3), 2018‏
572018
Molecular beam epitaxy of transition metal nitrides for superconducting device applications‏
DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ...‏
physica status solidi (a) 217 (3), 1900675, 2020‏
342020
Selective deuteron production using target normal sheath acceleration‏
JT Morrison, M Storm, E Chowdhury, KU Akli, S Feldman, C Willis, ...‏
Physics of Plasmas 19 (3), 2012‏
332012
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes‏
TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ...‏
Applied Physics Letters 116 (11), 2020‏
282020
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template‏
TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ...‏
Applied Physics Letters 114 (20), 2019‏
232019
Investigation of switching time in GaN/AlN resonant tunneling diodes by experiments and P-SPICE models‏
WD Zhang, TA Growden, DF Storm, DJ Meyer, PR Berger, ER Brown‏
IEEE Transactions on Electron Devices 67 (1), 75-79, 2019‏
202019
A nonlinear circuit simulation of switching process in resonant-tunneling diodes‏
WD Zhang, ER Brown, TA Growden, PR Berger, R Droopad‏
IEEE Transactions on Electron Devices 63 (12), 4993-4997, 2016‏
152016
Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition‏
A Ramesh, TA Growden, PR Berger, R Loo, W Vandervorst, B Douhard, ...‏
IEEE Transactions on electron Devices 59 (3), 602-609, 2012‏
152012
AlN/GaN/AlN resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy on freestanding GaN‏
DF Storm, TA Growden, W Zhang, ER Brown, N Nepal, DS Katzer, ...‏
Journal of Vacuum Science & Technology B 35 (2), 2017‏
142017
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2‏
EM Cornuelle, TA Growden, DF Storm, ER Brown, W Zhang, BP Downey, ...‏
AIP Advances 10 (5), 2020‏
132020
Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time‏
TA Growden, ER Brown, W Zhang, R Droopad, PR Berger‏
Applied Physics Letters 107 (15), 2015‏
122015
Electroluminescence in Unipolar-Doped Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization‏
ER Brown, WD Zhang, TA Growden, P Fakhimi, PR Berger‏
Physical Review Applied 16 (5), 054008, 2021‏
102021
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire‏
DF Storm, TA Growden, EM Cornuelle, PR Peri, T Osadchy, JW Daulton, ...‏
Journal of Vacuum Science & Technology B 38 (3), 2020‏
82020
Fabrication and characterization of GaN/AlN resonant tunneling diodes‏
WD Zhang, TA Growden, ER Brown, PR Berger, DF Storm, DJ Meyer‏
High-Frequency GaN Electronic Devices, 249-281, 2020‏
72020
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures‏
EN Jin, BP Downey, VJ Gokhale, JA Roussos, MT Hardy, TA Growden, ...‏
APL Materials 9 (11), 2021‏
62021
Micro-transfer printing of GaN HEMTs for heterogeneous integration and flexible RF circuit design‏
BP Downey, A Xie, S Mack, DS Katzer, JG Champlain, Y Cao, N Nepal, ...‏
2020 Device Research Conference (DRC), 1-2, 2020‏
62020
Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures‏
ER Brown, W Zhang, T Growden, PR Berger, D Storm, D Meyer‏
US Patent 10,461,216, 2019‏
62019
Methods for attaining high interband tunneling current in III-Nitrides‏
TA Growden, S Krishnamoorthy, DN Nath, A Ramesh, S Rajan, PR Berger‏
70th Device Research Conference, 163-164, 2012‏
42012
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مقالات 1–20