| Highly textured and conductive undoped ZnO film using hydrogen post-treatment SJ Baik, JH Jang, CH Lee, WY Cho, KS Lim Applied physics letters 70 (26), 3516-3518, 1997 | 167 | 1997 |
| Extremely transparent and conductive ZnO: Al thin films prepared by photo-assisted metalorganic chemical vapor deposition (photo-MOCVD) using AlCl3 (6H2O) as new doping material SY Myong, SJ Baik, CH Lee, WYCWY Cho, KSLKS Lim Japanese journal of applied physics 36 (8B), L1078, 1997 | 162 | 1997 |
| 90% yield production of polymer nano-memristor for in-memory computing B Zhang, W Chen, J Zeng, F Fan, J Gu, X Chen, L Yan, G Xie, S Liu, ... Nature communications 12 (1), 1984, 2021 | 147 | 2021 |
| Semiconductor devices and methods for fabricating the same YH Son, S Baik, J Jeong, K Hwang US Patent 8,482,049, 2013 | 147 | 2013 |
| A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect J Won Seo, SJ Baik, SJ Kang, YH Hong, JH Yang, KS Lim Applied Physics Letters 98 (23), 2011 | 95 | 2011 |
| High speed and nonvolatile Si nanocrystal memory for scaled flash technology using highly field-sensitive tunnel barrier SJ Baik, S Choi, UI Chung, JT Moon IEEE International Electron Devices Meeting 2003, 22.3. 1-22.3. 4, 2003 | 94 | 2003 |
| Low power operating bipolar TMO ReRAM for sub 10 nm era MJ Kim, IG Baek, YH Ha, SJ Baik, JH Kim, DJ Seong, SJ Kim, YH Kwon, ... 2010 International Electron Devices Meeting, 19.3. 1-19.3. 4, 2010 | 90 | 2010 |
| Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrate YH Son, M bum Lee, KH Hwang, SJ Baik US Patent 8,923,057, 2014 | 75 | 2014 |
| CMOS SRAM cells employing multiple-gate transistors and methods fabricating the same ZL Huo, SJ Baik, IS Yeo, HS Yoon, SE Kim US Patent App. 11/375,617, 2006 | 74* | 2006 |
| Low-temperature annealing for highly conductive lead chalcogenide quantum dot solids SJ Baik, K Kim, KS Lim, SM Jung, YC Park, DG Han, S Lim, S Yoo, ... The Journal of Physical Chemistry C 115 (3), 607-612, 2011 | 65 | 2011 |
| Engineering on tunnel barrier and dot surface in Si nanocrystal memories SJ Baik, S Choi, UI Chung, JT Moon Solid-State Electronics 48 (9), 1475-1481, 2004 | 55 | 2004 |
| Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide S Il Park, S Jae Baik, JS Im, L Fang, JW Jeon, K Su Lim Applied Physics Letters 99 (6), 2011 | 54 | 2011 |
| Band engineered charge trap layer for highly reliable MLC flash memory ZL Huo, JK Yang, SH Lim, SJ Baik, J Lee, JH Han, IS Yeo, UI Chung, ... 2007 IEEE Symposium on VLSI Technology, 138-139, 2007 | 52 | 2007 |
| Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device J Won Seo, SJ Baik, SJ Kang, YH Hong, JH Yang, L Fang, KS Lim Applied Physics Letters 96 (5), 2010 | 41 | 2010 |
| Highly scalable and CMOS-compatible STTM cell technology SJ Ahn, GH Koh, KW Kwon, SJ Baik, GT Jung, YN Hwang, HS Jeong, ... IEEE International Electron Devices Meeting 2003, 10.4. 1-10.4. 4, 2003 | 40 | 2003 |
| Methods of manufacturing rewriteable three-dimensional semiconductor memory devices YH Son, K Hwang, S Baik US Patent 8,450,176, 2013 | 37 | 2013 |
| Bipolar resistance switching driven by tunnel barrier modulation in TiOx/AlOx bilayered structure SJ Baik, KS Lim Applied Physics Letters 97 (7), 2010 | 35 | 2010 |
| Examination and improvement of reading disturb characteristics of a surrounded gate STTM memory cell SJ Ahn, KH Koh, KW Kwon, SJ Baek, YN Hwang, GT Jung, HS Jung, ... 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003. 2, 528-530, 2003 | 34 | 2003 |
| Fabrication and characterization of electrospun carbon nanotubes/titanium dioxide nanofibers used in anodes of dye-sensitized solar cells NT Hieu, SJ Baik, OH Chung, JS Park Synthetic metals 193, 125-131, 2014 | 33 | 2014 |
| Three-Dimensional Semiconductor Memory Devices and Methods of Forming the Same YH Son, M Lee, K Hwang, S Baik, JH Kim US Patent App. 13/039,043, 2011 | 33 | 2011 |
Seunghyup YooProfessor, School of Electrical Engineering, KAIST, S. Koreaبريد إلكتروني تم التحقق منه على kaist.edu