متابعة
Ki-Sik Im
Ki-Sik Im
한국폴리텍대학 대구캠퍼스 조교수
بريد إلكتروني تم التحقق منه على kopo.ac.kr
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate‏
KS Im, JB Ha, KW Kim, JS Lee, DS Kim, SH Hahm, JH Lee‏
IEEE Electron Device Letters 31 (3), 192-194, 2010‏
2002010
Effects of TMAH Treatment on Device Performance of Normally Off MOSFET‏
KW Kim, SD Jung, DS Kim, HS Kang, KS Im, JJ Oh, JB Ha, JK Shin, ...‏
IEEE electron device letters 32 (10), 1376-1378, 2011‏
1932011
High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure‏
KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee‏
IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013‏
1302013
Normally Off Single-NanoribbonMISFET‏
KS Im, RH Kim, KW Kim, DS Kim, CS Lee, S Cristoloveanu, JH Lee‏
IEEE Electron Device Letters 34 (1), 27-29, 2012‏
862012
AlGaN/GaN FinFET with extremely broad transconductance by side-wall wet etch‏
YW Jo, DH Son, CH Won, KS Im, JH Seo, IM Kang, JH Lee‏
IEEE Electron Device Letters 36 (10), 1008-1010, 2015‏
842015
Heterojunction-free GaN nanochannel FinFETs with high performance‏
KS Im, YW Jo, JH Lee, S Cristoloveanu, JH Lee‏
IEEE electron device letters 34 (3), 381-383, 2013‏
742013
Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach‏
KS Im, V Sindhuri, YW Jo, DH Son, JH Lee, S Cristoloveanu, JH Lee‏
Applied Physics Express 8 (6), 066501, 2015‏
532015
AlGaN/GaN-based lateral-type Schottky barrier diode with very low reverse recovery charge at high temperature‏
JH Lee, C Park, KS Im, JH Lee‏
IEEE transactions on electron devices 60 (10), 3032-3039, 2013‏
492013
Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET‏
S Vodapally, CG Theodorou, Y Bae, G Ghibaudo, S Cristoloveanu, KS Im, ...‏
IEEE Transactions on Electron Devices 64 (9), 3634-3638, 2017‏
442017
Characteristics of GaN and AlGaN/GaN FinFETs‏
KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee‏
Solid-state electronics 97, 66-75, 2014‏
432014
Low voltage operation of GaN vertical nanowire MOSFET‏
DH Son, YW Jo, JH Seo, CH Won, KS Im, YS Lee, HS Jang, DH Kim, ...‏
Solid-State Electronics 145, 1-7, 2018‏
422018
Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach‏
KS Im, CH Won, S Vodapally, R Caulmilone, S Cristoloveanu, YT Kim, ...‏
Applied Physics Letters 109 (14), 2016‏
372016
Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer‏
KS Im, CH Won, S Vodapally, DH Son, YW Jo, YH Park, JH Lee, JH Lee‏
Journal of Crystal Growth 441, 41-45, 2016‏
342016
Normally-off AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistor with recessed gate and p-GaN back-barrier‏
DS Kim, KS Im, HS Kang, KW Kim, SB Bae, JK Mun, ES Nam, JH Lee‏
Japanese Journal of Applied Physics 51 (3R), 034101, 2012‏
332012
1/f-noise in AlGaN/GaN nanowire omega-FinFETs‏
S Vodapally, YI Jang, IM Kang, IT Cho, JH Lee, Y Bae, G Ghibaudo, ...‏
IEEE Electron Device Letters 38 (2), 252-254, 2016‏
302016
Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs‏
KW Kim, SD Jung, DS Kim, KS Im, HS Kang, JH Lee, Y Bae, DH Kwon, ...‏
Microelectronic engineering 88 (7), 1225-1227, 2011‏
302011
Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET‏
DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ...‏
Microelectronic Engineering 147, 155-158, 2015‏
272015
Growth of high quality GaN on Si (111) substrate by using two-step growth method for vertical power devices application‏
JH Lee, KS Im‏
Crystals 11 (3), 234, 2021‏
242021
Low-frequency noise characteristics of GaN nanowire gate-all-around transistors with/without 2-DEG channel‏
KS Im, MSP Reddy, R Caulmilone, CG Theodorou, G Ghibaudo, ...‏
IEEE Transactions on Electron Devices 66 (3), 1243-1248, 2019‏
242019
Effect of gate structure on the trapping behavior of GaN junctionless FinFETs‏
KS Im, SJ An, CG Theodorou, G Ghibaudo, S Cristoloveanu, JH Lee‏
IEEE Electron Device Letters 41 (6), 832-835, 2020‏
212020
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مقالات 1–20