متابعة
Joe Salfi
Joe Salfi
Assistant Professor, University of British Columbia.
بريد إلكتروني تم التحقق منه على ece.ubc.ca - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Spatially resolving valley quantum interference of a donor in silicon‏
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...‏
Nature materials 13 (6), 605, 2014‏
1242014
Quantum simulation of the Hubbard model with dopant atoms in silicon‏
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...‏
Nature communications 7, 11342, 2016‏
1222016
Roadmap on quantum nanotechnologies‏
A Laucht, F Hohls, N Ubbelohde, MF Gonzalez-Zalba, DJ Reilly, S Stobbe, ...‏
Nanotechnology 32 (16), 162003, 2021‏
1062021
Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection‏
J Salfi, U Philipose, CF De Sousa, S Aouba, HE Ruda‏
Applied physics letters 89 (26), 2006‏
922006
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits‏
Z Wang, E Marcellina, AR Hamilton, JH Cullen, S Rogge, J Salfi, D Culcer‏
npj Quantum Information 7 (1), 54, 2021‏
79*2021
Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires‏
KL Kavanagh, J Salfi, I Savelyev, M Blumin, HE Ruda‏
Applied Physics Letters 98 (15), 2011‏
792011
Engineering long spin coherence times of spin–orbit qubits in silicon‏
T Kobayashi, J Salfi, C Chua, J Van Der Heijden, MG House, D Culcer, ...‏
Nature Materials 20 (1), 38-42, 2021‏
782021
Direct observation of single-charge-detection capability of nanowire field-effect transistors‏
J Salfi, IG Savelyev, M Blumin, SV Nair, HE Ruda‏
Nature nanotechnology 5 (10), 737-741, 2010‏
772010
Spatial metrology of dopants in silicon with exact lattice site precision‏
M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ...‏
Nature nanotechnology 11 (9), 763-768, 2016‏
682016
Charge-insensitive single-atom spin-orbit qubit in silicon‏
J Salfi, JA Mol, D Culcer, S Rogge‏
Physical review letters 116 (24), 246801, 2016‏
642016
Quantum computing with acceptor spins in silicon‏
J Salfi, M Tong, S Rogge, D Culcer‏
Nanotechnology 27 (24), 244001, 2016‏
572016
Probing the spin states of a single acceptor atom‏
J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ...‏
Nano letters 14 (3), 1492-1496, 2014‏
562014
Electronic properties of quantum dot systems realized in semiconductor nanowires‏
J Salfi, S Roddaro, D Ercolani, L Sorba, I Savelyev, M Blumin, HE Ruda, ...‏
Semiconductor Science and Technology 25 (2), 024007, 2010‏
512010
Quantum computing with acceptor-based qubits‏
S Rogge, J Salfi, JA Mol‏
US Patent 9,691,033, 2017‏
452017
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor‏
J van der Heijden, T Kobayashi, MG House, J Salfi, S Barraud, ...‏
Science advances 4 (12), eaat9199, 2018‏
40*2018
Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition‏
Z Li, J Salfi, C De Souza, P Sun, SV Nair, HE Ruda‏
Applied Physics Letters 97 (6), 2010‏
392010
Valley interference and spin exchange at the atomic scale in silicon‏
B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ...‏
Nature communications 11 (1), 6124, 2020‏
352020
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions‏
A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ...‏
Physical Review B 97 (19), 195301, 2018‏
292018
Donor hyperfine stark shift and the role of central-cell corrections in tight-binding theory‏
M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ...‏
Journal of Physics: Condensed Matter 27 (15), 154207, 2015‏
292015
Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants‏
JA Mol, J Salfi, JA Miwa, MY Simmons, S Rogge‏
Physical Review B—Condensed Matter and Materials Physics 87 (24), 245417, 2013‏
292013
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مقالات 1–20