متابعة
Anumita Sengupta
Anumita Sengupta
Indian Institute of Technology Kharagpur
بريد إلكتروني تم التحقق منه على iitkgp.ac.in
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Analysis of AlGaN/GaN high electron mobility transistor for high frequency application‏
S Chatterjee, A Sengupta, S Kundu, A Islam‏
2017 Devices for Integrated Circuit (DevIC), 196-199, 2017‏
102017
Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation‏
AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta‏
IEEE Transactions on Electron Devices 70 (2), 454-460, 2023‏
82023
Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate‏
A Sengupta, A Islam‏
Microsystem Technologies 25, 1927-1935, 2019‏
72019
Analysis of breakdown voltage of a field plated High Electron Mobility Transistor‏
A Chitransh, S Moonka, A Priya, S Prasad, A Sengupta, A Islam‏
2017 Devices for Integrated Circuit (DevIC), 167-169, 2017‏
62017
Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modelling‏
A Sengupta, TK Bhattacharyya, G Dutta‏
Journal of Physics D: Applied Physics 54 (40), 405103, 2021‏
52021
ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3 MODFETs with p-GaN Gate‏
AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta‏
2023 IEEE 20th India Council International Conference (INDICON), 673-678, 2023‏
32023
Study of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs PHEMT with delta doping and lower Al mole fraction‏
K Ankit, R Kumar, O Prakash, A Sengupta, M Guduri, A Islam‏
2017 International Conference on Multimedia, Signal Processing and …, 2017‏
22017
Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope‏
A Priya, S Moonka, A Chitransh, S Prasad, A Sengupta, A Islam‏
2017 Devices for Integrated Circuit (DevIC), 364-367, 2017‏
22017
Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity‏
S Moonka, A Priya, A Chitransh, S Prasad, A Sengupta, A Islam‏
2017 Devices for Integrated Circuit (DevIC), 360-363, 2017‏
22017
Performance comparison of AlGaN/GaN HFET with sapphire and 4H-SiC substrate‏
A Sengupta, A Islam‏
2017 Devices for Integrated Circuit (DevIC), 190-195, 2017‏
22017
Impact of Device Parameters on the Performance of -GaOTEXPRESERVE2 Nanomembrane MESFETs‏
A Sengupta, AD Meshram, TK Bhattacharyya, G Dutta‏
IEEE Transactions on Electron Devices, 2024‏
12024
Design Space of β-(Al x Ga1–x) 2O3/Ga2O3 Double Heterojunction Field-Effect Transistors for High-Power Applications‏
A Deo Meshram, A Sengupta, TK Bhattacharyya, G Dutta‏
IEEE Transactions on Electron Devices 71 (8), 4860-4866, 2024‏
2024
Breakdown voltage enhancement techniques in β-Ga2O3 nanomembrane MESFETs‏
A Sengupta, AD Meshram, TK Bhattacharyya, G Dutta‏
2024 IEEE International Conference on Electronics, Computing and …, 2024‏
2024
Design Space of -(AlGaO/GaO Double Heterojunction Field-Effect Transistors for High-Power Applications‏
AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta‏
IEEE Transactions on Electron Devices, 2024‏
2024
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مقالات 1–14