Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases BS Lee, JR Abelson, SG Bishop, DH Kang, B Cheong, KB Kim
Journal of Applied Physics 97 (9), 2005
507 2005 Full integration of highly manufacturable 512Mb PRAM based on 90nm technology JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
307 2006 One-dimensional heat conduction model for an electrical phase change random access memory device with an DH Kang, DH Ahn, KB Kim, JF Webb, KW Yi
Journal of applied physics 94 (5), 3536-3542, 2003
189 2003 Two-bit cell operation in diode-switch phase change memory cells with 90nm technology DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ...
2008 Symposium on VLSI Technology, 98-99, 2008
130 2008 Indium selenide (In2Se3) thin film for phase-change memory H Lee, DH Kang, L Tran
Materials Science and Engineering: B 119 (2), 196-201, 2005
111 2005 IEDM Tech. Dig. CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
IEDM Tech. Dig 2, 2006
110 2006 Phase change material and non-volatile memory device using the same DH Anh, TY Lee, KB Kim, BK Cheong, DH Kang, JH Jeong, IH Kim, ...
US Patent 7,233,054, 2007
95 2007 Switching behavior of indium selenide-based phase-change memory cell H Lee, YK Kim, D Kim, DH Kang
IEEE transactions on magnetics 41 (2), 1034-1036, 2005
86 2005 Characterization of atomic layer deposited WN x C y thin film as a diffusion barrier for copper metallization SH Kim, SS Oh, HM Kim, DH Kang, KB Kim, WM Li, S Haukka, ...
Journal of The Electrochemical Society 151 (4), C272, 2004
78 2004 Phase change memory devices and read methods using elapsed time-based read voltages YN Hwang, DH Kang, CY Um
US Patent 7,969,798, 2011
73 2011 Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating SH Choi, T Cheon, SH Kim, DH Kang, GS Park, S Kim
Journal of The Electrochemical Society 158 (6), D351, 2011
71 2011 Atomic-layer-deposited SH Kim, SS Oh, KB Kim, DH Kang, WM Li, S Haukka, M Tuominen
Applied physics letters 82 (25), 4486-4488, 2003
65 2003 An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode DH Kang, IH Kim, J Jeong, B Cheong, DH Ahn, D Lee, HM Kim, KB Kim, ...
Journal of applied physics 100 (5), 2006
62 2006 Lower voltage operation of a phase change memory device with a highly resistive TiON layer DH Kang, DH Ahn, MH Kwon, HS Kwon, KB Kim, KS Lee, B Cheong
Japanese journal of applied physics 43 (8R), 5243, 2004
41 2004 Time-resolved analysis of the set process in an electrical phase-change memory device DH Kang, B Cheong, J Jeong, TS Lee, IH Kim, WM Kim, JY Huh
Applied Physics Letters 87 (25), 2005
40 2005 Atomic layer deposition of RuAlO thin films as a diffusion barrier for seedless Cu interconnects T Cheon, SH Choi, SH Kim, DH Kang
Electrochemical and Solid-State Letters 14 (5), D57, 2011
39 2011 Neuromophic system and configuration method thereof D Kang, KC Ryoo, HG Jun, H Jeong, JH Oh
US Patent 9,710,747, 2017
38 2017 Memory device and method of manufacturing the same JH Jeong, GH Koh, DH Kang
US Patent 9,941,333, 2018
36 2018 Resistance variable memory device and method of writing data JH Lee, K Lee, HA Daewon, G Jeong, D Kang
US Patent 7,907,437, 2011
35 2011 Memory device including ovonic threshold switch adjusting threshold voltage thereof M Terai, GH Koh, DH Kang
US Patent 9,741,764, 2017
30 2017