Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
1033 2001 Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon DJ DiMaria, E Cartier, D Arnold
Journal of Applied Physics 73 (7), 3367-3384, 1993
907 1993 Mechanism for stress‐induced leakage currents in thin silicon dioxide films DJ DiMaria, E Cartier
Journal of Applied physics 78 (6), 3883-3894, 1995
679 1995 Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition DA Neumayer, E Cartier
Journal of Applied Physics 90 (4), 1801-1808, 2001
635 2001 Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
524 2001 High-resolution depth profiling in ultrathin EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76 (2), 176-178, 2000
515 2000 Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen E Cartier, JH Stathis, DA Buchanan
Applied physics letters 63 (11), 1510-1512, 1993
500 1993 Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
455 2003 Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel
Applied Physics Letters 77 (17), 2710-2712, 2000
421 2000 Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
394 2001 Theory of high-field electron transport and impact ionization in silicon dioxide D Arnold, E Cartier, DJ DiMaria
Physical Review B 49 (15), 10278, 1994
386 1994 Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
373 2001 Enabling enhanced reliability and mobility for replacement gate planar and finfet structures T Ando, EA Cartier, K Choi, WL Lai, V Narayanan, R Ramachandran
US Patent App. 14/696,015, 2015
371 2015 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide NA Bojarczuk Jr, C Cabral Jr, EA Cartier, MM Frank, EP Gousev, S Guha, ...
US Patent 7,242,055, 2007
366 2007 Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005
358 2005 Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ...
2010 symposium on VLSI technology, 21-22, 2010
326 2010 Formation of a stratified lanthanum silicate dielectric by reaction with Si (001) M Copel, E Cartier, FM Ross
Applied Physics Letters 78 (11), 1607-1609, 2001
301 2001 Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature Nanotechnology 8 (10), 748, 2013
300 2013 Anode hole injection and trapping in silicon dioxide DJ DiMaria, E Cartier, DA Buchanan
Journal of applied physics 80 (1), 304-317, 1996
273 1996 Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks A Kerber, EA Cartier
IEEE Transactions on Device and Materials Reliability 9 (2), 147-162, 2009
205 2009 
Matt CopelIBM TJ Watson Research Centerبريد إلكتروني تم التحقق منه على us.ibm.com
