مقالات بحثية تمّ التفويض بإتاحتها للجميع - Andrew Arnoldمزيد من المعلومات
عدد المقالات البحثية غير المتاحة للجميع في أي موقع: 3
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das
ACS nano 11 (3), 3110-3118, 2017
التفويضات: US Department of Defense
Extraordinary Radiation Hardness of Atomically Thin MoS2
AJ Arnold, T Shi, I Jovanovic, S Das
ACS applied materials & interfaces 11 (8), 8391-8399, 2019
التفويضات: US Department of Defense
Steep slope 2D strain field effect transistor: 2D-SFET
D Schulman, A Arnold, S Das
2018 International Symposium on VLSI Technology, Systems and Application …, 2018
التفويضات: US National Science Foundation
عدد المقالات البحثية المتاحة للجميع في موقع ما: 4
Contact engineering for 2D materials and devices
DS Schulman, AJ Arnold, S Das
Chemical Society Reviews 47 (9), 3037-3058, 2018
التفويضات: US National Science Foundation, US Department of Defense
Thickness trends of electron and hole conduction and contact carrier injection in surface charge transfer doped 2D field effect transistors
AJ Arnold, DS Schulman, S Das
ACS nano 14 (10), 13557-13568, 2020
التفويضات: US Department of Defense
Facile electrochemical synthesis of 2D monolayers for high-performance thin-film transistors
DS Schulman, A Sebastian, D Buzzell, YT Huang, AJ Arnold, S Das
ACS applied materials & interfaces 9 (51), 44617-44624, 2017
التفويضات: US National Science Foundation, US Department of Defense
Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2
MJ Cherukara, DS Schulmann, K Sasikumar, AJ Arnold, H Chan, ...
Nano letters 18 (3), 1993-2000, 2018
التفويضات: US National Science Foundation, US Department of Energy, US Department of …
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