| Contact engineering for 2D materials and devices DS Schulman, AJ Arnold, S Das Chemical Society Reviews 47 (9), 3037-3058, 2018 | 809 | 2018 |
| Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das ACS nano 11 (3), 3110-3118, 2017 | 283 | 2017 |
| Thickness trends of electron and hole conduction and contact carrier injection in surface charge transfer doped 2D field effect transistors AJ Arnold, DS Schulman, S Das ACS nano 14 (10), 13557-13568, 2020 | 56 | 2020 |
| Extraordinary Radiation Hardness of Atomically Thin MoS2 AJ Arnold, T Shi, I Jovanovic, S Das ACS applied materials & interfaces 11 (8), 8391-8399, 2019 | 54 | 2019 |
| The prospect of two-dimensional heterostructures: a review of recent breakthroughs DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das IEEE Nanotechnology Magazine 11 (2), 6-17, 2017 | 37 | 2017 |
| Satisfiability attack-resistant camouflaged two-dimensional heterostructure devices A Wali, S Kundu, AJ Arnold, G Zhao, K Basu, S Das ACS nano 15 (2), 3453-3467, 2021 | 34 | 2021 |
| Facile electrochemical synthesis of 2D monolayers for high-performance thin-film transistors DS Schulman, A Sebastian, D Buzzell, YT Huang, AJ Arnold, S Das ACS applied materials & interfaces 9 (51), 44617-44624, 2017 | 32 | 2017 |
| Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2 MJ Cherukara, DS Schulmann, K Sasikumar, AJ Arnold, H Chan, ... Nano letters 18 (3), 1993-2000, 2018 | 10 | 2018 |
| IEEE Nanotechnol DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das Mag 11, 6-17, 2017 | 7 | 2017 |
| Steep slope 2D strain field effect transistor: 2D-SFET D Schulman, A Arnold, S Das 2018 International Symposium on VLSI Technology, Systems and Application …, 2018 | 4 | 2018 |
| SAT-Attack Resistant Hardware Obfuscation using Camouflaged Two-Dimensional Heterostructure Devices A Wali, A Arnold, S Kundu, S Choudhury, K Basu, S Das | | 2020 |
| The Effects of Interface and Surface Charge on Two Dimensional Transistors for Neuromorphic, Radiation, and Doping Applications AJ Arnold | | 2020 |
| Extraordinary Radiation Hardness of Atomically Thin MoS₂ AJ Arnold, T Shi, I Jovanovic, S Das | | 2019 |
| 2017 Index IEEE Nanotechnology Magazine Vol. 11 P Ajayan, A Ali, A Arnold, X Baillin, L Balicas, D Ban, S Behura, V Berry, ... | | 2017 |
Saptarshi DasAckley Professor of Engineering, Pennsylvania State Universityبريد إلكتروني تم التحقق منه على psu.edu