| Non-volatile resistance switching memories and methods of making same MD Brubaker, CAP de Araujo, J Celinska US Patent 7,778,063, 2010 | 268 | 2010 |
| Correlated electron memory CAP de Araujo, J Celinska, MD Brubaker US Patent 7,872,900, 2011 | 267 | 2011 |
| Stabilized resistive switching memory J Celinska, MD Brubaker, CAP de Araujo US Patent 7,639,523, 2009 | 198 | 2009 |
| Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ... Journal of Applied Physics 110 (5), 053506, 2011 | 101 | 2011 |
| On-chip optical interconnects made with gallium nitride nanowires MD Brubaker, PT Blanchard, JB Schlager, AW Sanders, A Roshko, ... Nano letters 13 (2), 374-377, 2013 | 99 | 2013 |
| Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si (111) substrates by molecular beam epitaxy MD Brubaker, SM Duff, TE Harvey, PT Blanchard, A Roshko, AW Sanders, ... Crystal Growth & Design 16 (2), 596-604, 2016 | 95 | 2016 |
| Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects DR Diercks, BP Gorman, R Kirchhofer, N Sanford, K Bertness, M Brubaker Journal of Applied Physics 114 (18), 184903, 2013 | 92 | 2013 |
| GaN nanowire MOSFET with near-ideal subthreshold slope W Li, MD Brubaker, BT Spann, KA Bertness, P Fay IEEE Electron Device Letters 39 (2), 184-187, 2017 | 52 | 2017 |
| Mist deposited high-k dielectrics for next generation MOS gates DO Lee, P Roman, CT Wu, P Mumbauer, M Brubaker, R Grant, J Ruzyllo Solid-State Electronics 46 (11), 1671-1677, 2002 | 49 | 2002 |
| UV LEDs based on p–i–n core–shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy MD Brubaker, KL Genter, A Roshko, PT Blanchard, BT Spann, TE Harvey, ... Nanotechnology 30 (23), 234001, 2019 | 44 | 2019 |
| Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy LH Robins, E Horneber, NA Sanford, KA Bertness, MD Brubaker, ... Journal of Applied Physics 120 (12), 124313, 2016 | 30 | 2016 |
| Vortex based CVD reactor RW Grant, BJ Petrone, MD Brubaker, PD Mumbauer US Patent 6,428,847, 2002 | 27 | 2002 |
| Laser‐assisted atom probe tomography of MBE grown GaN nanowire heterostructures NA Sanford, PT Blanchard, M Brubaker, KA Bertness, A Roshko, ... physica status solidi (c) 11 (3‐4), 608-612, 2014 | 25 | 2014 |
| Surface dopant concentration monitoring using noncontact surface charge profiling P Roman, J Staffa, S Fakhouri, M Brubaker, J Ruzyllo, K Torek, ... Journal of applied physics 83 (4), 2297-2300, 1998 | 25 | 1998 |
| Selective Area Growth and Structural Characterization of GaN Nanostructures on Si (111) Substrates A Roshko, M Brubaker, P Blanchard, T Harvey, K Bertness Crystals 8 (9), 366, 2018 | 23 | 2018 |
| Axisymmetric scalable magneto-gravitational trap for diamagnetic particle levitation JP Houlton, ML Chen, MD Brubaker, KA Bertness, CT Rogers Review of Scientific Instruments 89 (12), 125107, 2018 | 21 | 2018 |
| Near-field control and imaging of free charge carrier variations in GaN nanowires S Berweger, PT Blanchard, MD Brubaker, KJ Coakley, NA Sanford, ... Applied Physics Letters 108 (7), 073101, 2016 | 21 | 2016 |
| Mist deposition in semiconductor device manufacturing P Mumbauer, M Brubaker, P Roman, R Grant, K Chang, W Mahoney, ... Semiconductor international 27 (12), 75-80, 2004 | 20 | 2004 |
| Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination A Roshko, MD Brubaker, PT Blanchard, KA Bertness, TE Harvey, ... Journal of Materials Research 32 (5), 936-946, 2017 | 18 | 2017 |
| Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires A Sanders, P Blanchard, K Bertness, M Brubaker, C Dodson, T Harvey, ... Nanotechnology 22 (46), 465703, 2011 | 18 | 2011 |
