متابعة
Rahul Pendurthi
Rahul Pendurthi
بريد إلكتروني تم التحقق منه على intel.com
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Benchmarking monolayer MoS2 and WS2 field-effect transistors
A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das
Nature communications 12 (1), 693, 2021
4392021
Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...
Advanced Science 7 (24), 2001174, 2020
1602020
Three-dimensional integration of two-dimensional field-effect transistors
D Jayachandran, R Pendurthi, MUK Sadaf, NU Sakib, A Pannone, ...
Nature 625 (7994), 276-281, 2024
1142024
Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution
A Kozhakhmetov, S Stolz, AMZ Tan, R Pendurthi, S Bachu, F Turker, ...
Advanced Functional Materials 31 (42), 2105252, 2021
792021
Heterogeneous integration of atomically thin semiconductors for non‐von Neumann CMOS
R Pendurthi, D Jayachandran, A Kozhakhmetov, N Trainor, JA Robinson, ...
Small 18 (33), 2202590, 2022
402022
Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networks
A Sebastian, R Pendurthi, A Kozhakhmetov, N Trainor, JA Robinson, ...
Nature communications 13 (1), 6139, 2022
382022
Dilute Rhenium Doping and its Impact on Defects in MoS2
R Torsi, KT Munson, R Pendurthi, E Marques, B Van Troeye, L Huberich, ...
ACS nano 17 (16), 15629-15640, 2023
292023
Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors
TF Schranghamer, NU Sakib, MUK Sadaf, ...
Nano letters 23 (8), 3426-3434, 2023
252023
Study on the growth parameters and the electrical and optical behaviors of 2D tungsten disulfide
VK Singh, R Pendurthi, JR Nasr, H Mamgain, RS Tiwari, S Das, ...
ACS applied materials & interfaces 12 (14), 16576-16583, 2020
202020
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors
R Pendurthi, NU Sakib, MUK Sadaf, Z Zhang, Y Sun, C Chen, ...
Nature nanotechnology 19 (7), 970-977, 2024
192024
Observation of Rich Defect Dynamics in Monolayer MoS2
H Ravichandran, T Knobloch, A Pannone, A Karl, B Stampfer, D Waldhoer, ...
ACS nano 17 (15), 14449-14460, 2023
112023
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors
S Rai, VK Singh, R Pendurthi, JR Nasr, S Das, A Srivastava
Journal of Applied Physics 131 (9), 2022
102022
Monolithic three-dimensional (3D) integration of two-dimensional (2D) field effect transistors
D Jayachandran, R Pendurthi, N Trainor, Y Han, J Redwing, Y Yang, ...
32023
Dilute rhenium doping and its impact on intrinsic defects in MoS2
R Torsi, KT Munson, R Pendurthi, EA Marques, B Van Troeye, L Huberich, ...
arXiv preprint arXiv:2302.00110, 2023
22023
Monolithic Integration of Two-Dimensional Field Effect Transistors
R Pendurthi
2024
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe
S Rai, VK Singh, R Pendurthi
2022
A Synergistic Hardware Neural Network with Enhanced Learning and Accurate Inference Enabled by Programmable and Complementary 2D FETs
R Pendurthi
2021
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مقالات 1–17