Benchmarking monolayer MoS2 and WS2 field-effect transistors A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das Nature communications 12 (1), 693, 2021 | 439 | 2021 |
Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ... Advanced Science 7 (24), 2001174, 2020 | 160 | 2020 |
Three-dimensional integration of two-dimensional field-effect transistors D Jayachandran, R Pendurthi, MUK Sadaf, NU Sakib, A Pannone, ... Nature 625 (7994), 276-281, 2024 | 114 | 2024 |
Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution A Kozhakhmetov, S Stolz, AMZ Tan, R Pendurthi, S Bachu, F Turker, ... Advanced Functional Materials 31 (42), 2105252, 2021 | 79 | 2021 |
Heterogeneous integration of atomically thin semiconductors for non‐von Neumann CMOS R Pendurthi, D Jayachandran, A Kozhakhmetov, N Trainor, JA Robinson, ... Small 18 (33), 2202590, 2022 | 40 | 2022 |
Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networks A Sebastian, R Pendurthi, A Kozhakhmetov, N Trainor, JA Robinson, ... Nature communications 13 (1), 6139, 2022 | 38 | 2022 |
Dilute Rhenium Doping and its Impact on Defects in MoS2 R Torsi, KT Munson, R Pendurthi, E Marques, B Van Troeye, L Huberich, ... ACS nano 17 (16), 15629-15640, 2023 | 29 | 2023 |
Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors TF Schranghamer, NU Sakib, MUK Sadaf, ... Nano letters 23 (8), 3426-3434, 2023 | 25 | 2023 |
Study on the growth parameters and the electrical and optical behaviors of 2D tungsten disulfide VK Singh, R Pendurthi, JR Nasr, H Mamgain, RS Tiwari, S Das, ... ACS applied materials & interfaces 12 (14), 16576-16583, 2020 | 20 | 2020 |
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors R Pendurthi, NU Sakib, MUK Sadaf, Z Zhang, Y Sun, C Chen, ... Nature nanotechnology 19 (7), 970-977, 2024 | 19 | 2024 |
Observation of Rich Defect Dynamics in Monolayer MoS2 H Ravichandran, T Knobloch, A Pannone, A Karl, B Stampfer, D Waldhoer, ... ACS nano 17 (15), 14449-14460, 2023 | 11 | 2023 |
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors S Rai, VK Singh, R Pendurthi, JR Nasr, S Das, A Srivastava Journal of Applied Physics 131 (9), 2022 | 10 | 2022 |
Monolithic three-dimensional (3D) integration of two-dimensional (2D) field effect transistors D Jayachandran, R Pendurthi, N Trainor, Y Han, J Redwing, Y Yang, ... | 3 | 2023 |
Dilute rhenium doping and its impact on intrinsic defects in MoS2 R Torsi, KT Munson, R Pendurthi, EA Marques, B Van Troeye, L Huberich, ... arXiv preprint arXiv:2302.00110, 2023 | 2 | 2023 |
Monolithic Integration of Two-Dimensional Field Effect Transistors R Pendurthi | | 2024 |
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe S Rai, VK Singh, R Pendurthi | | 2022 |
A Synergistic Hardware Neural Network with Enhanced Learning and Accurate Inference Enabled by Programmable and Complementary 2D FETs R Pendurthi | | 2021 |