متابعة
Stefan Slesazeck
Stefan Slesazeck
NaMLab gGmbH
بريد إلكتروني تم التحقق منه على namlab.com
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors‏
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...‏
Advanced Functional Materials 26 (25), 4601-4612, 2016‏
8502016
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond‏
S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...‏
2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017‏
5412017
2022 roadmap on neuromorphic computing and engineering‏
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...‏
Neuromorphic Computing and Engineering 2 (2), 022501, 2022‏
5192022
Reconfigurable silicon nanowire transistors‏
A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber‏
Nano letters 12 (1), 119-124, 2012‏
5012012
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs‏
M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...‏
2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016‏
4322016
Unveiling the double-well energy landscape in a ferroelectric layer‏
M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ...‏
Nature 565 (7740), 464-467, 2019‏
4122019
The past, the present, and the future of ferroelectric memories‏
T Mikolajick, U Schroeder, S Slesazeck‏
IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020‏
4072020
Next generation ferroelectric materials for semiconductor process integration and their applications‏
T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ...‏
Journal of Applied Physics 129 (10), 2021‏
3492021
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG‏
J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...‏
2012 symposium on VLSI technology (VLSIT), 25-26, 2012‏
3352012
Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors‏
H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ...‏
ACS applied materials & interfaces 9 (4), 3792-3798, 2017‏
3332017
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors‏
T Mikolajick, S Slesazeck, MH Park, U Schroeder‏
Mrs Bulletin 43 (5), 340-346, 2018‏
3272018
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2‏
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...‏
Advanced Functional Materials 26 (47), 8643-8649, 2016‏
2972016
Novel ferroelectric FET based synapse for neuromorphic systems‏
H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...‏
2017 Symposium on VLSI Technology, T176-T177, 2017‏
2712017
Ferroelectric field-effect transistors based on HfO2: a review‏
H Mulaosmanovic, ET Breyer, S Dünkel, S Beyer, T Mikolajick, ...‏
Nanotechnology 32 (50), 502002, 2021‏
2622021
Nanoscale resistive switching memory devices: a review‏
S Slesazeck, T Mikolajick‏
Nanotechnology 30 (35), 352003, 2019‏
2252019
Mimicking biological neurons with a nanoscale ferroelectric transistor‏
H Mulaosmanovic, E Chicca, M Bertele, T Mikolajick, S Slesazeck‏
Nanoscale 10 (46), 21755-21763, 2018‏
2212018
Nonlinear dynamics of a locally-active memristor‏
A Ascoli, S Slesazeck, H Mähne, R Tetzlaff, T Mikolajick‏
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (4), 1165-1174, 2015‏
2012015
Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors‏
E Yurchuk, J Müller, J Paul, T Schlösser, D Martin, R Hoffmann, S Müeller, ...‏
IEEE Transactions on Electron Devices 61 (11), 3699-3706, 2014‏
1882014
Physical model of threshold switching in NbO 2 based memristors‏
S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ...‏
RSC advances 5 (124), 102318-102322, 2015‏
1792015
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance‏
H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck‏
IEEE Transactions on Electron Devices 66 (9), 3828-3833, 2019‏
1662019
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مقالات 1–20