متابعة
Arnaud Bournel
Arnaud Bournel
Université Paris-Saclay
بريد إلكتروني تم التحقق منه على universite-paris-saclay.fr
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder‏
D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...‏
Applied Physics Letters 92 (4), 2008‏
1402008
On the ballistic transport in nanometer-scaled DG MOSFETs‏
J Saint Martin, A Bournel, P Dollfus‏
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004‏
1332004
Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node‏
M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ...‏
IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011‏
1152011
Intrinsic spin Hall conductivity of the semimetals and ‏
J Zhou, J Qiao, A Bournel, W Zhao‏
Physical Review B 99 (6), 060408, 2019‏
1072019
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation‏
D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...‏
IEEE Transactions on Electron Devices 54 (9), 2232-2242, 2007‏
1042007
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures‏
VN Do, VH Nguyen, P Dollfus, A Bournel‏
Journal of Applied Physics 104 (6), 063708-063708-7, 2008‏
942008
Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction‏
J Zhou, J Qiao, CG Duan, A Bournel, KL Wang, W Zhao‏
ACS applied materials & interfaces 11 (19), 17647-17653, 2019‏
922019
Resonant tunnelling diodes based on graphene/h-BN heterostructure‏
VH Nguyen, F Mazzamuto, A Bournel, P Dollfus‏
Journal of Physics D: Applied Physics 45 (32), 325104, 2012‏
892012
Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas‏
A Bournel, P Dollfus, P Bruno, P Hesto‏
European Physical Journal-Applied Physics 4 (1), 1-4, 1998‏
871998
Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation‏
P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto‏
IEEE Transactions on Electron Devices 51 (5), 749-756, 2004‏
842004
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas‏
J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus‏
Semiconductor science and technology 21 (4), L29, 2006‏
752006
Controllable spin-dependent transport in armchair graphene nanoribbon structures‏
VH Nguyen, VN Do, A Bournel, VL Nguyen, P Dollfus‏
Journal of Applied Physics 106 (5), 053710-053710-7, 2009‏
672009
A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach‏
D Querlioz, J Saint-Martin, VN Do, A Bournel, P Dollfus‏
IEEE Transactions on Nanotechnology 5 (6), 737-744, 2006‏
672006
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation‏
J Saint-Martin, A Bournel, P Dollfus‏
Solid-State Electronics 50 (1), 94-101, 2006‏
662006
Graphene nanomesh transistor with high on/off ratio and good saturation behavior‏
S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ...‏
Applied Physics Letters 103 (18), 2013‏
612013
Current-limiting challenges for all-spin logic devices‏
L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert, W Zhao‏
Scientific Reports 5, 14905, 2015‏
592015
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs‏
D Querlioz, P Dollfus, VN Do, A Bournel, VL Nguyen‏
Journal of Computational Electronics 5, 443-446, 2006‏
572006
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect‏
VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus‏
Nanotechnology 23 (6), 065201, 2012‏
562012
Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions‏
W Yang, Y Cao, J Han, X Lin, X Wang, G Wei, C Lv, A Bournel, W Zhao‏
Nanoscale 13 (2), 862-868, 2021‏
532021
Gate-driven pure spin current in graphene‏
X Lin, L Su, Z Si, Y Zhang, A Bournel, Y Zhang, JO Klein, A Fert, W Zhao‏
Physical Review Applied 8 (3), 034006, 2017‏
532017
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مقالات 1–20